SMD Type
HEXFET Power MOSFET KRF1302S
TO-263
Features
Advanced Process Technology Ultra Low On-Resistance
+ 0 .2 8 .7 -0...
SMD Type
HEXFET Power MOSFET KRF1302S
TO-263
Features
Advanced Process Technology Ultra Low On-Resistance
+ 0 .2 8 .7 -0 .2 + 0 .1 1 .2 7 -0 .1
Transistors IC
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
Dynamic dv/dt Rating 175 Operating Temperature
+0.1 1.27-0.1
0.1max
+0.1 0.81-0.1
Fast Switching
+ 0 .2 5 .2 8 -0 .2
Repetitive Avalanche Allowed up to Tjmax
2.54
+0.2 -0.2 +0.1 5.08-0.1
+ 0 .2 2 .5 4 -0 .2
+ 0 .2 1 5 .2 5 -0 .2
2.54
+0.2 0.4-0.2
Absolute Maximum Ratings Ta = 25
Parameter Continuous Drain Current, VGS @ 10V,TC = 25 Continuous Drain Current, VGS @ 10V,TC = 100 Pulsed Drain Current Power Dissipation TC = 25 Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current*1 Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Junction-to-Case Junction-to-Ambient (PCB mount) R JC R JA VGS EAS IAR EAR dv/dt TJ,TSTG TBD -55 to + 175 300 0.74 40 /W Symbol ID ID IDM PD Rating 174 120 700 200 1.4 20 350 Fig.1.2 W W/ V mJ A mJ V/ns A Unit
Fig1. Unclamped Inductive Test Circuit
Fig 2. Unclamped Inductive Waveforms
5 .6 0
11gate Gate 22drain Drain 33source Source
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SMD Type
KRF1302S
Electrical Characteristics Ta = 25
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Fo...