Power MOSFET. KRF1302S Datasheet

KRF1302S MOSFET. Datasheet pdf. Equivalent

Part KRF1302S
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF1302S TO-263 Features Advanced Process Technology Ultra Low On-Resis.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF1302S Datasheet




KRF1302S
SMD Type
TransistIoCrs
HEXFET Power MOSFET
KRF1302S
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175 Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
TO-263
+0.2
4.57+0.1 -0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54 5.08+0.2
-0.2 +0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
11gGaatete
22dDrarainin
33sSoouurcrcee
Absolute Maximum Ratings Ta = 25
Parameter
Continuous Drain Current, VGS @ 10V,TC = 25
Continuous Drain Current, VGS @ 10V,TC = 100
Pulsed Drain Current
Power Dissipation TC = 25
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current*1
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient (PCB mount)
Symbol
ID
ID
IDM
PD
VGS
EAS
IAR
EAR
dv/dt
TJ,TSTG
R JC
R JA
Rating
174
120
700
200
1.4
20
350
Fig.1.2
TBD
-55 to + 175
300
0.74
40
Unit
A
W
W/
V
mJ
A
mJ
V/ns
/W
Fig1. Unclamped Inductive Test Circuit
Fig 2. Unclamped Inductive Waveforms
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KRF1302S
SMD Type
TransistIoCrs
KRF1302S
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Intermal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current Body Diode)
Pulsed Source Current Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Symbol
Testconditons
V(BR)DSS
VGS = 0V, ID = 250µA
V(BR)DSS/ TJ Reference to 25 , ID = 1mA
RDS(on)
VGS = 10V, ID = 104A
VGS(th)
VDS = VGS, ID = 250 A
gfs VDS = 15V, ID = 104A
IDSS
VDS = 20V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 150
IGSS
VGS = 20V
VGS = -20V
Qg ID = 104A
Qgs VDS = 16V
Qgd VGS = 10V
td(on)
VDD = 11V
tr ID = 104A
td(off)
RG = 4.5
tf VGS = 10V
Min Typ Max Unit
20 V
0.021
V/
3.3 4.0 m
2.0 4.0 V
6.7 S
20
A
250
200
-200
nA
79 120
18 27 nC
31 46
28
130
ns
47
16
LD 4.5
nH
LS 7.5
Ciss
Coss
Crss
Coss
Coss
Coss eff.
VGS = 0V
VDS = 25V
f = 1.0MHz
VGS = 0V, VDS = 1.0V, f = 1.0MHz
VGS = 0V, VDS = 16V, f = 1.0MHz
VGS = 0V, VDS = 0V to 16V
3600
2370
520
5710
2370
3540
pF
IS 174
A
ISM 700
VSD TJ = 25 , IS = 104A, VGS = 0V
1.3 V
trr TJ = 25 , IF = 104A
66 100 ns
Qrr di/dt = 100A/ s
130 200
C
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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