KRF1302S

SMD Type HEXFET Power MOSFET KRF1302S TO-263 Features Advanced Process Technology Ultra Low On-Resistance + 0 .2 8 .7 -0 .2 + 0 .1 1 .2 7 -0 .1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Dynamic dv/dt Rating 175 Operating Temperature +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 Fast Switching + 0 .2 5 .2 8 -0 .2 Repetitive Avalanche Allowed up to Tjmax 2.54 +0.2 -0.2 +0.1 5.08-0.1 + 0 .2 2 .5 4 -0 .2 + 0 .2 1 5 .2 5 -0 .2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ 10V,TC = 25 Continuous Drain Current, VGS @ 10V,TC = 100 Pulsed Drain Current Power Dissipation TC = 25 Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current*1 Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Junction-to-Case Junction-to-Ambient (PCB mount) R JC R JA VGS EAS IAR EAR dv/dt TJ,TSTG TBD -55 to + 175 300 0.74 40 /W Symbol ID ID IDM PD Rating 174 120 700 200 1.4 20 350 Fig.1.2 W W/ V mJ A mJ V/ns A Unit Fig1. Unclamped Inductive Test Circuit Fig 2. Unclamped Inductive Waveforms 5 .6 0 11gate Gate 22drain Drain 33source Source www.kexin.com.cn 1 SMD Type KRF1302S Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Fo...