Power MOSFET. KRF2805S Datasheet

KRF2805S MOSFET. Datasheet pdf. Equivalent

Part KRF2805S
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF2805S Features Advanced Process Technology + 0 .1 1 .2 7 -0 .1 Tran.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF2805S Datasheet




KRF2805S
SMD Type
TransistIoCrs
HEXFET Power MOSFET
KRF2805S
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175 Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
TO-263
+0.2
4.57+0.1 -0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54 5.08+0.2
-0.2 +0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
11gGaatete
22dDrarainin
33sSoouurcrcee
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Continuous Drain Current, VGS @ 10V,TC = 25
ID
Continuous Drain Current, VGS @ 10V,TC = 100
ID
Pulsed Drain Current
IDM
Power Dissipation TC = 25
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Single Pulse Avalanche Energy
EAS
Avalanche Current*1
IAR
Repetitive Avalanche Energy
EAR
Peak Diode Recovery dv/dt*
dv/dt
Operating Junction and Storage Temperature Range TJ,TSTG
Soldering Temperature, for 10 seconds
Junction-to-Case
R JC
Junction-to-Ambient (PCB mount)
R JA
* ISD 104A, di/dt 240A/ s, VDD V(BR)DSS,TJ 175
Rating
135
96
700
200
1.3
20
380
Fig.1.2
2
-55 to + 175
300
0.75
40
Unit
A
W
W/
V
mJ
A
mJ
V/ns
/W
Fig1. Unclamped Inductive Test Circuit
Fig 2. Unclamped Inductive Waveforms
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KRF2805S
SMD Type
TransistIoCrs
KRF2805S
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Intermal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current Body Diode)
Pulsed Source Current Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
* Pulse width 400 s; duty cycle 2%.
Symbol
Testconditons
V(BR)DSS
VGS = 0V, ID = 250 A
V(BR)DSS/ TJ Reference to 25 , ID = 1mA
RDS(on)
VGS = 10V, ID = 104A *
VGS(th)
VDS = VGS, ID = 250 A
gfs VDS = 25V, ID = 104A
VDS = 55V, VGS = 0V
IDSS
VDS = 44V, VGS = 0V, TJ = 150
IGSS
VGS = 20V
VGS = -20V
Qg ID = 104A
Qgs VDS = 44V
Qgd VGS = 10V *
td(on)
VDD = 28V
tr ID = 104A
td(off)
RG = 2.5
tf VGS = 10V *
Min Typ Max Unit
55 V
0.06 V/
3.9 4.7 m
2.0 4.0 V
91 S
20
A
250
200
nA
-200
150 230
38 57 nC
52 78
14
120
ns
68
110
LD 4.5
nH
LS 7.5
Ciss
Coss
Crss
Coss
Coss
Coss eff.
VGS = 0V
VDS = 25V
f = 1.0MHz
VGS = 0V, VDS = 1.0V, f = 1.0MHz
VGS = 0V, VDS = 44V, f = 1.0MHz
VGS = 0V, VDS = 0V to 44V
5110
1190
210
6470
860
1600
pF
IS 175
A
ISM 700
VSD TJ = 25 , IS = 104A, VGS = 0V
1.3 V
trr TJ = 25 , IF = 104A
80 120 ns
Qrr di/dt = 100A/ s *
290 430
C
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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