Power MOSFET. KRF4905S Datasheet

KRF4905S MOSFET. Datasheet pdf. Equivalent

Part KRF4905S
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF4905S TO-263 Features Advanced Process Technology Surface Mount + 0 .
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF4905S Datasheet



KRF4905S
SMD Type
TransistIoCrs
HEXFET Power MOSFET
KRF4905S
Features
Advanced Process Technology
Surface Mount
175 Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
TO-263
+0.2
4.57+0.1 -0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54 5.08+0.2
-0.2 +0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
11Ggaattee
22Ddrraaiinn
33Ssoouurrccee
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Continuous Drain Current, VGS @ -10V,Tc = 25
ID
Continuous Drain Current, VGS @ -10V,Tc = 100
ID
Pulsed Drain Current*1
IDM
Power Dissipation Ta = 25
Power Dissipation Tc = 25
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Single Pulse Avalanche Energy*4
EAS
Avalanche Current *1
IAR
Repetitive Avalanche Energy
EAR
Peak Diode Recovery dv/dt *2
dv/dt
Operating Junction and Storage Temperature Range
TJ,TSTG
Junction-to-Case
R JC
Junction-to-Ambient
R JA
*1Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD -38A, di/dt -270A/ s, VDD V(BR)DSS,TJ 175
* 3 When mounted on 1" square PCB
*4 Starting TJ = 25 , L = 1.3mH,RG = 25 , IAS = -38A.
Rating
-74
-52
-260
3.8
200
1.3
20
930
-38
20
-5
-55 to + 175
0.75
40
Unit
A
W
W/
V
mJ
A
mJ
V/ns
/W
/W
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KRF4905S
SMD Type
TransistIoCrs
KRF4905S
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Testconditons
V(BR)DSS VGS = 0V, ID =- 250 A
V(BR)DSS/ TJ ID = -1mA,Reference to 25
RDS(on)
VGS = -10V, ID = -38A*1
VGS(th)
VDS = VGS, ID = -250 A
gfs VDS = -25V, ID = -38A*1
VDS = -55V, VGS = 0V
IDSS
VDS = -44V, VGS = 0V, TJ = 150
IGSS
VGS = 20V
VGS = -20V
Qg ID = -38A
Qgs VDS = -44V
Qgd VGS = -10V,*1
td(on)
VDD = -28V
tr ID = -38A
td(off)
RG =2.5
tf RD =0.72 *1
LS Between lead,and center of die contact
Ciss VGS = 0V
Coss
VDS = -25V
Crss f = 1.0MHz
Min Typ Max Unit
-55 V
-0.05
V/
0.02 m
-2.0 -4 V
21 S
-25
-250
A
100
-100
nA
180
32 nC
86
18
99
ns
61
96
7.5 nH
3400
1400
pF
640
Continuous Source Current Body Diode)
Pulsed Source Current Body Diode) *2
IS
ISM
-74
-260
A
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
*1 Pulse width 300 s; duty cycle 2%.
*2 Repetitive rating; pulse width limited bymax
VSD
trr
Qrr
ton
TJ = 25 , IS = -38A, VGS = 0V*1
-1.6 V
TJ = 25 , IF = -38A
89 130 ns
di/dt = 100A/ s*1
230 350 nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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