SMD Type
HEXFET Power MOSFET KRF4905S
TO-263
Features
Advanced Process Technology Surface Mount
+ 0 .2 8 .7 -0 .2 + 0 .1...
SMD Type
HEXFET Power MOSFET KRF4905S
TO-263
Features
Advanced Process Technology Surface Mount
+ 0 .2 8 .7 -0 .2 + 0 .1 1 .2 7 -0 .1
Transistors IC
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
175
Operating Temperature
Fast Switching P-Channel Fully Avalanche Rated
+0.1 1.27-0.1
0.1max
+0.1 0.81-0.1
+ 0 .2 5 .2 8 -0 .2
2.54
+0.2 -0.2 +0.1 5.08-0.1
+ 0 .2 2 .5 4 -0 .2
+ 0 .2 1 5 .2 5 -0 .2
2.54
+0.2 0.4-0.2
Absolute Maximum Ratings Ta = 25
Parameter Continuous Drain Current, VGS @ -10V,Tc = 25 Continuous Drain Current, VGS @ -10V,Tc = 100 Pulsed Drain Current*1 Power Dissipation Ta = 25 Power Dissipation Tc = 25 Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy*4 Avalanche Current *1 Repetitive Avalanche Energy Peak Diode Recovery dv/dt *2 Operating Junction and Storage Temperature Range Junction-to-Case Junction-to-Ambient VGS EAS IAR EAR dv/dt TJ,TSTG R R
JC JA
Symbol ID ID IDM PD
Rating -74 -52 -260 3.8 200 1.3 20 930 -38 20 -5 -55 to + 175 0.75 40
Unit
A
W W/ V mJ A mJ V/ns
/W /W
*1Repetitive rating; pulse width limited by max. junction temperature. *2 ISD -38A, di/dt -270A/ s, VDD V(BR)DSS,TJ 175
* 3 When mounted on 1" square PCB *4 Starting TJ = 25 , L = 1.3mH,RG = 25 , IAS = -38A.
5 .6 0
1Gate gate 1 2Drain drain 2 3Source source 3
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1
SMD Type
KRF4905S
Electrical Characteristics Ta = 25
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Th...