Power MOSFET. KRF7104 Datasheet

KRF7104 MOSFET. Datasheet pdf. Equivalent

Part KRF7104
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7104 IC IC Features Adavanced Process Technology Ultra Low On-Resi.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7104 Datasheet



KRF7104
SMD Type
HEXFET Power MOSFET
KRF7104
ICIC
Features
Adavanced Process Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
1: Source 1
2: Gate 1
7,8: Drain 1
3: Source 2
4: Gate 2
5,6: Drain 2
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Continuous Drain Current, VGS @ 10V @ Ta = 25
ID
Continuous Drain Current, VGS @ 10V @ Ta = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation
@TC= 25
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Peak Diode Recovery dv/dt *3
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *2
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 Surface mounted on FR-4 board, t 10sec.
*3 ISD -2.3A, di/dt 100A/ s, VDD V(BR)DSS,TJ 150
Rating
-2.3
-1.8
-10
2.0
0.016
12
-3
-55 to + 150
62.5
Unit
A
W
W/
V
V/nS
/W
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KRF7104
SMD Type
ICIC
KRF7104
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Symbol
Testconditons
V(BR)DSS VGS = 0V, ID = -250 A
V(BR)DSS/ TJ ID = -1mA,Reference to 25
RDS(on)
VGS = -10V, ID = -1.0A*1
VGS = -4.5V, ID = -0.50A*1
VGS(th)
VDS = VGS, ID = -250 A
gfs VDS = -15V, ID = -2.3A*1
IDSS
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 55
IGSS
VGS = -12V
VGS = 12V
Qg ID = -2.3A
Qgs VDS = -10V
Qgd VGS = -10V *
td(on)
VDD = -10V
tr ID = -1.0A
td(off)
RG = 6
tf RD = 10 *
LS
Internal Drain Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current Body Diode)
LD
Ciss
Coss
Crss
IS
VGS = 0V
VDS = -15V
f = 1.0MHz
Pulsed Source Current Body Diode) *2
ISM
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
VSD TJ = 25 , IS = -1.5A, VGS = 0V*1
trr TJ = 25 , IF =-1.5A
Qrr di/dt = -100A/ s*1
*1 Pulse width 300 s; duty cycle 2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
Min Typ Max Unit
-20 V
-0.015
V/
0.19 0.25
0.30 0.40
-1.0 -3.0 V
2.5 S
-2.0
A
-25
-100
100
nA
9.3 25
1.6 nC
3.0
12 40
16 40
ns
42 90
30 50
4.0
nH
6.0
290
210 pF
67
-2.0
A
-9.2
-1.2 V
69 100 ns
90 140
C
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