Power MOSFET. KRF7105 Datasheet

KRF7105 MOSFET. Datasheet pdf. Equivalent

Part KRF7105
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7105 Features Advanced Process Technology Ultra Low On-Resistance Du.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7105 Datasheet



KRF7105
SMD Type
HEXFET Power MOSFET
KRF7105
Features
Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Continuous Drain Current VGS @ 10V Ta = 25
ID
Continuous Drain Current VGS @ 10V Ta = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation
@Tc= 25
PD
Linear Derating Factor
Peak Diode Recovery dv/dt *2
dv/dt
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient*3
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
N-Channel
P-Channel
3.5 -2.3
2.8 -1.8
14 -10
2.0
0.016
3.0 -3.0
20
-55 to + 150
62.5
*2 N-Channel ISD 3.5A, di/dt 90A/ s, VDD V(BR)DSS, TJ 150
P-Channel ISD -2.3A, di/dt 90A/ s, VDD V(BR)DSS, TJ 150
*3 Surface mounted on FR-4 board, t 10sec.
Unit
A
W
W/
V/ ns
V
/W
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KRF7105
SMD Type
ICIC
KRF7105
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductace
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Testconditons
VGS = 0V, ID = 250 A
V(BR)DSS
VGS = 0V, ID = -250 A
N-Ch
P-Ch
V(BR)DSS/ ID = 1mA,Reference to 25
TJ ID = -1mA,Reference to 25
N-Ch
P-Ch
RDS(on)
VGS = 10V, ID = 1.0A*1
VGS = 4.5V, ID = 0.5A*1
VGS = -10V, ID = -1.0A*1
VGS = -4.5V, ID = -0.50A*1
N-Ch
P-Ch
VGS(th)
VDS = VGS, ID = 250 A
VDS = VGS, ID = -250 A
N-Ch
P-Ch
VDS =15V, ID = 3.5A*1
gfs
VDS = -15V, ID = -3.5A*1
N-Ch
P-Ch
VDS = 20V, VGS = 0V
N-Ch
IDSS
VDS = -20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55
P-Ch
N-Ch
VDS = -20V, VGS = 0V, TJ = 55
P-Ch
IGSS VGS = 20V
N-Ch
P-Ch
N-Channel
Qg
ID =2.3A,VDS = 12.5V,VGS =10V *1
N-Ch
P-Ch
Qgs
P-Channel
N-Ch
P-Ch
ID = -2.3A,VDS = -12.5V,VGS = -10V *1 N-Ch
Qgd
P-Ch
td(on)
N-Channel
VDD = 25V,ID = 1.0A,RG = 6.0
N-Ch
P-Ch
RD = 25 *1
tr
P-Channel
N-Ch
P-Ch
td(off)
VDD = -25V,ID = -1.0A,RG = 6.0
RD = 25 1*1
N-Ch
P-Ch
N-Ch
tf
P-Ch
LD
Between lead,6mm(0.25in.)from
N-Ch
P-Ch
packing and center of die contact
LS
N-Ch
P-Ch
N-Channel
Ciss
VGS = 0V,VDS = 15V,f = 1.0MHz *1
N-Ch
P-Ch
Coss
P-Channel
N-Ch
P-Ch
VGS = 0V,VDS = -15V,f = 1.0MHz *1 N-Ch
Crss
P-Ch
Min Typ Max Unit
25
V
-20
0.030
-0.015
V/
0.083 0.10
0.14 0.16
0.16 0.25
0.30 0.40
1.0 3.0
V
-1.0 -3.0
4.3
S
3.1
2.0
-2.0
A
25
-25
100
nA
100
9.4 27
10 25
1.7
nC
1.9
3.1
2.8
7.0
12
9.0
13
ns
45
45
25
37
4.0
4.0
nH
6.0
6.0
330
290
250
pF
210
61
67
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