Power MOSFET. KRF7220 Datasheet

KRF7220 MOSFET. Datasheet pdf. Equivalent

Part KRF7220
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7220 IC IC Features Ultra Low On-Resistance P-Channel MOSFET Surfa.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7220 Datasheet



KRF7220
SMD Type
HEXFET Power MOSFET
KRF7220
Features
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain- Source Voltage
VDS
Continuous Drain Current, VGS @ -4.5V @ Ta = 25
ID
Continuous Drain Current, VGS @ -4.5V @ Ta = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation
@Ta= 25
PD
Power Dissipation
@Ta = 70
PD
Linear Derating Factor
Single Pulse Avalanche Energy *4
EAS
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *3
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*3 Surface mounted on FR-4 board, t 10sec.
*4 Starting TJ = 25 , L = 1.8mH,RG = 25 , IAS = 11A
Rating
-14
11
8.8
88
2.5
1.6
0.02
110
12
-55 to + 150
50
Unit
V
A
W
W
W/
mJ
V
/W
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KRF7220
SMD Type
ICIC
KRF7220
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Testconditons
V(BR)DSS VGS = 0V, ID = -5mA
V(BR)DSS/ TJ ID = -1mA,Reference to 25
RDS(on)
VGS = -4.5V, ID = -11A*1
VGS = -2.5V, ID = -8.8A*1
VGS(th)
VDS = VGS, ID = -250 A
gfs VDS = -10V, ID = -11A*1
IDSS
VDS = -11.2V, VGS = 0V
VDS = -11.2V, VGS = 0V, TJ = 70
IGSS
VGS = -12V
VGS = 12V
Qg ID = -11A
Qgs VDS = -10V
Qgd VGS = -5.0V,*1
td(on)
VDD = -10V
tr ID = -11A
td(off)
RG = 6.2
tf RD = 0.91 *1
Ciss VGS = 0V
Coss
VDS = -10V
Crss f = 1.0MHz
Continuous Source Current Body Diode)
IS
Pulsed Source Current Body Diode) *2
ISM
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
VSD TJ = 25 , IS = -2.5A, VGS = 0V*1
trr TJ = 25 , IF =-2.5A
Qrr di/dt = 100A/ s*1
*1 Pulse width 300 s; duty cycle 2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
Min Typ Max Unit
-14 V
-0.006
V/
0.0082 0.012
0.0125 0.02
-0.6 V
8.4 S
-5.0
-100
A
-100
100
nA
84 125
13 20 nC
37 55
19
420
ns
140
1040
8075
4400
pF
4150
-2.5
A
-88
-1.2
160 240
147 220
V
ns
C
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