Power MOSFET. KRF7309 Datasheet

KRF7309 MOSFET. Datasheet pdf. Equivalent

Part KRF7309
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7309 IC IC Features Generation V Technology Ultra Low On-Resistanc.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7309 Datasheet




KRF7309
SMD Type
HEXFET Power MOSFET
KRF7309
Features
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
10 Sec. Pulse Drain Current, VGS @ 10V Ta = 25
ID
Continuous Drain Current VGS @ 10V Ta = 25
ID
Continuous Drain Current VGS @ 10V Ta = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation
@Ta= 25 *3
PD
Linear Derating Factor (PCB Mount)*4
Peak Diode Recovery dv/dt *2
dv/dt
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
TJ, TSTG
Junction-to-Amb. (PCB Mount, steady state)*4
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
N-Channel
P-Channel
4.7 -3.5
4.0 -3.0
3.2 -2.4
16 -12
1.4
0.011
6.9 -6.0
20
-55 to + 150
90
*2 N-Channel ISD 2.4A, di/dt 73A/ s, VDD V(BR)DSS, TJ 150
P-Channel ISD -1.8A, di/dt 90A/ s, VDD V(BR)DSS, TJ 150
*3 Pulse width 300 s; duty cycle 2%.
*4 When mounted on 1" square PCB (FR-4 or G-10 Material).
Unit
A
W
W/
V/ ns
V
/W
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KRF7309
SMD Type
ICIC
KRF7309
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Symbol
Testconditons
VGS = 0V, ID = 250 A
V(BR)DSS
VGS = 0V, ID = -250 A
V(BR)DSS/ ID = 1mA,Reference to 25
TJ ID = -1mA,Reference to 25
VGS = 10V, ID = 2.4A*1
VGS = 4.5V, ID = 2.0A*1
RDS(on)
VGS = -10V, ID = -1.8A*1
VGS = -4.5V, ID = -1.5A*1
VGS(th)
gfs
VDS = VGS, ID = 250 A
VDS = VGS, ID = -250 A
VDS =15V, ID = 2.4A*1
VDS = -24V, ID = -1.8A*1
VDS = 24V, VGS = 0V
IDSS
VDS = -24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125
VDS = -24V, VGS = 0V, TJ = 125
Gate-to-Source Forward Leakage
IGSS VGS = 20V
Total Gate Charge
N-Channel
Qg
ID =2.6A,VDS = 16V,VGS =4.5V
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Qgs
P-Channel
ID = -2.2A,VDS = -16V,VGS = -4.5V
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
N-Channel
VDD = 10V,ID = 2.6A,RG = 6.0
RD = 3.8
P-Channel
VDD = -10V,ID = -2.2A,RG = 6.0
RD = 4.5
Fall Time
tf
Internal Drain Inductace
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
LD
Between lead tip
and center of die contact
LS
N-Channel
Ciss
VGS = 0V,VDS = 15V,f = 1.0MHz
Coss
Crss
P-Channel
VGS = 0V,VDS = -15V,f = 1.0MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min Typ Max Unit
30
V
-30
0.032
-0.037
V/
0.050
0.080
0.10
0.16
1.0
V
-1.0
5.2
S
2.5
1.0
-1.0
A
25
-25
100
nA
100
25
25
2.9
nC
2.9
7.9
9.0
6.8
11
21
17
ns
22
25
7.7
18
4.0
4.0
nH
6.0
6.0
520
440
180
pF
200
72
93
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