Power MOSFET. KRF7313 Datasheet

KRF7313 MOSFET. Datasheet pdf. Equivalent

Part KRF7313
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7313 IC IC Features Generation V Technology Ultra Low On-Resistanc.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7313 Datasheet




KRF7313
SMD Type
HEXFET Power MOSFET
KRF7313
Features
Generation V Technology
Ultra Low On-Resistance
Dual N-Channel Mosfet
Surface Mount
Fully Avalanche Rated
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain- Source Voltage
VDS
Gate-to-Source Voltage
VGS
Continuous Drain Current, Ta = 25 *3
ID
Continuous Drain Current,TC = 70 *3
ID
Pulsed Drain Current
IDM
Maximum Power Dissipation Ta = 25 *3
Maximum Power Dissipation Ta = 70 *3
PD
Single Pulse Avalanche Energy *4
EAS
Avalanche Current
IAR
Repetitive Avalanche Energy
EAR
Peak Diode Recovery dv/dt*2
dv/dt
Operating Junction and Storage Temperature Range TJ,TSTG
Maximum Junction-to-Ambient *3
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD 4.0A, di/dt 74A/ s, VDD V(BR)DSS,TJ 150
*3 Surface mounted on FR-4 board, t 10sec.
*4 Starting TJ=25 ,L=10mH,RG=25 , IAS=4.0A
Rating
30
20
6.5
30
2.5
2
1.3
82
4
0.2
5.8
-55 to + 150
62.5
Unit
V
A
W
mJ
A
mJ
V/ns
/W
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KRF7313
SMD Type
ICIC
KRF7313
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current Body Diode)
Symbol
Testconditons
V(BR)DSS
VGS = 0V, ID = 250A
V(BR)DSS/ TJ ID = 1mA,Reference to 25
RDS(on)
VGS = 10V, ID = 5.8A*1
VGS = 4.5V, ID = 4.7A*1
VGS(th)
VDS = VGS, ID = 250 A
gfs VDS = 15V, ID = 5.8A*1
IDSS
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 55
IGSS
VGS = 20V
VGS = -20V
Qg ID = 5.8A
Qgs VDS = 15V
Qgd VGS = 10V,*1
td(on)
VDD = 15V
tr ID = 1.0A
td(off)
RG = 6.0
tf RD = 15 *1
Ciss VGS = 0V
Coss
VDS = 25V
Crss f = 1.0MHz
IS
Pulsed Source Current Body Diode) *2
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
*1 Pulse width 300 s; duty cycle 2%.
*2 Repetitive rating; pulse width limited bymax
ISM
VSD
trr
Qrr
TJ = 25 , IS = 1.7A, VGS = 0V*1
TJ = 25 , IF =1.7A
di/dt = 100A/ s*1
Min Typ Max Unit
30 V
0.022
V/
0.023 0.029
0.032 0.046
1.0 V
14 S
1.0
A
25
100
-100
nA
22 33
2.6 3.9 nC
6.4 9.6
8.1 12
8.9 13
26 39
ns
17 26
650
320 pF
130
2.5
A
30
0.78 1.0
45 68
58 87
V
ns
C
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