Power MOSFET. KRF7317 Datasheet

KRF7317 MOSFET. Datasheet pdf. Equivalent

Part KRF7317
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7317 IC IC Features Generation V Technology Ultra Low On-Resistanc.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7317 Datasheet




KRF7317
SMD Type
HEXFET Power MOSFET
KRF7317
Features
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Fully Avalanche Rated
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Continuous Drain Current Ta = 25
Continuous Drain Current Ta = 70
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
@Ta= 25 *2
Power Dissipation
@Ta= 70 *2
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt *1
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambient *2
Symbol
VDS
ID
ID
IDM
IS
PD
EAS
IAR
EAR
dv/dt
VGS
TJ, TSTG
R JA
N-Channel
P-Channel
20 -20
6.6 -5.3
5.3 -4.3
26 -21
2.5 -2.5
2.0
1.3
100 150
4.1 -2.9
0.20
5.0 -5
12
-55 to + 150
62.5
*1 N-Channel ISD 4.1A, di/dt 92A/ s, VDD V(BR)DSS, TJ 150
P-Channel ISD -2.9A, di/dt -77A/ s, VDD V(BR)DSS, TJ 150
*2 Surface mounted on FR-4 board, t 10sec.
Unit
V
A
W
mJ
A
mJ
V/ ns
V
/W
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KRF7317
SMD Type
ICIC
KRF7317
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Symbol
Testconditons
VGS = 0V, ID = 250 A
V(BR)DSS
VGS = 0V, ID = -250 A
V(BR)DSS/ ID = 1mA,Reference to 25
TJ ID = -1mA,Reference to 25
VGS = 4.5V, ID = 6.0A*1
VGS = 2.7V, ID = 5.2A*1
RDS(on)
VGS = -4.5V, ID = -2.9A*1
VGS = -2.7V, ID = -1.5A*1
VGS(th)
VDS = VGS, ID = 250 A
VDS = VGS, ID = -250 A
VDS =10V, ID = 6.0A*1
gfs
VDS = -10V, ID = -1.5A*1
VDS = 16V, VGS = 0V
IDSS
VDS = -16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 55
VDS = -16V, VGS = 0V, TJ = 55
Gate-to-Source Forward Leakage
IGSS VGS = 12V
Total Gate Charge
N-Channel
Qg
ID =6.0A,VDS = 10V,VGS =4.5V
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Qgs
P-Channel
ID = -2.9A,VDS = -16V,VGS = -4.5V
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
N-Channel
VDD = 10V,ID = 1.0A,RG = 6.0
RD = 10
P-Channel
VDD = -10V,ID = -2.9A,RG = 6.0
RD = 3.4
Fall Time
tf
Input Capacitance
N-Channel
Ciss
VGS = 0V,VDS = 15V,f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Coss
Crss
P-Channel
VGS = 0V,VDS = -15V,f = 1.0MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min Typ Max Unit
20
V
-20
0.027
0.031
V/
0.023 0.029
0.030 0.046
0.049 0.058
0.082 0.098
0.7
V
-0.7
20
S
5.9
1.0
-1.0
A
5.0
-25
100
nA
100
18 27
19 29
2.2 3.3
nC
4.0 6.1
6.2 9.3
7.7 12
8.1 12
15 22
17 25
40 60
ns
38 57
42 63
31 47
49 73
900
780
430
pF
470
200
240
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