Power MOSFET. KRF7325 Datasheet

KRF7325 MOSFET. Datasheet pdf. Equivalent

Part KRF7325
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7325 IC IC Features Trench Technology Ultra Low On-Resistance Dual.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7325 Datasheet



KRF7325
SMD Type
HEXFET Power MOSFET
KRF7325
ICIC
Features
Trench Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Low Profile (<1.8mm)
Available in Tape & Reel
1: Source 1
2: Gate 1
7,8: Drain 1
3: Source 2
4: Gate 2
5,6: Drain 2
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain- Source Voltage
VDS
Continuous Drain Current, VGS @ -4.5V @ Ta = 25
ID
Continuous Drain Current, VGS @ -4.5V @ Ta = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation *2
@Ta= 25
PD
Power Dissipation *2
@Ta = 70
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
TJ, TSTG
Junction-to-Drain Lead
R JL
Maximum Junction-to-Ambient *2
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 When mounted on 1 inch square copper board.
Rating
-12
-7.8
-6.2
-39
2.0
1.3
16
8.0
-55 to + 150
20
62.5
Unit
V
A
W
W
W/
V
/W
/W
www.kexin.com.cn 1



KRF7325
SMD Type
ICIC
KRF7325
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Testconditons
V(BR)DSS VGS = 0V, ID = -250 A
V(BR)DSS/ TJ ID = -1mA,Reference to 25
VGS = -4.5V, ID = -7.8A*1
RDS(on) VGS = -2.5V, ID = -6.2A*1
VGS = -1.8V, ID = -3.9A*1
VGS(th)
VDS = VGS, ID = -250 A
gfs VDS = -10V, ID = -7.8A*1
IDSS
IGSS
VDS = -9.6V, VGS = 0V
VDS = -9.6V, VGS = 0V, TJ = 70
VGS = -8.0V
VGS = 8.0V
Qg ID = -7.8A
Qgs VDS = -6.0V
Qgd VGS = -4.5V
td(on)
VDD = -6.0V,VGS=-4.5V
tr ID = -1.0A
td(off)
RG = 6
tf
Ciss VGS = 0V
Coss
VDS = -10V
Crss f = 1.0MHz
Continuous Source Current Body Diode)
IS
Pulsed Source Current Body Diode) *2
ISM
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
VSD TJ = 25 , IS = -2.0A, VGS = 0V*1
trr TJ = 25 , IF =-2.0A
Qrr di/dt = -100A/ s*1
*1 Pulse width 400 s; duty cycle 2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
Min Typ Max Unit
-12 V
0.007
V/
24
33 m
49
-0.40
-0.90 V
17 S
-1.0
A
-25
-100
nA
100
22 33
5.0 7.5 nC
4.7 7.0
9.4
9.8
ns
240
180
2020
520 pF
330
-2.0
A
-39
-1.2 V
36 54 ns
28 42 nC
2 www.kexin.com.cn







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)