KRF7350

SMD Type HEXFET Power MOSFET KRF7350 IC IC Features Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current Ta = 25 Continuous Drain Current Ta = 70 Pulsed Drain Current *1 Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy *4 Peak Diode Recovery dv/dt *2 Junction and Storage Temperature Range Maximum Junction-to-Ambient *3 Junction-to-Drain Lead VGS EAS dv/dt TJ, TSTG R R JA JL Symbol VDS ID ID IDM N-Channel 100 2.1 1.7 8.4 2.0 0.016 20 35 4.0 P-Channel -100 -1.5 -1.2 -6.0 Unit V A @Ta= 25 PD W W/ V 51 4.3 mJ V/ns -55 to + 150 62.5 20 /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 Pulse width 400 s; duty cycle 2%. *3 Surface mounted on 1 in square Cu board *4 N channel: Starting TJ = 25 , L = 4.0mH, RG = 25 , IAS = 4.2A P channel: Starting TJ = 25 , L = 11mH, RG = 25 , IAS = -3.0A www.kexin.com.cn 1 SMD Type KRF7350 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = 250 A VGS = 0V, ID = -250 A ID = 1mA,Reference to 25 ID = -1mA,Reference to 25 VGS = 10V, ID = 2.1A*1 VGS = -10V, ID = -1.5A*1 VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A VDS = 50V, ID = 2.1...