KRF7379

SMD Type HEXFET Power MOSFET KRF7379 IC IC Features Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current, VGS @ 10V @ Ta = 25 Continuous Drain Current, VGS @ 10V @ Ta = 70 Pulsed Drain Current *1 Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt *2 Junction and Storage Temperature Range Maximum Junction-to-Ambient *3 VGS dv/dt TJ, TSTG R JA Symbol VDS ID ID IDM N-Channel 30 5.8 4.6 46 2.5 0.02 20 5.0 P-Channel -30 -4.3 -3.4 -34 Unit V A @Ta= 25 PD W W/ V -5.0 V/ns -55 to + 150 50 /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD P-Channel ISD 2.4A, di/dt -1.8A, di/dt 73A/ 90A/ s, VDD s, VDD 10sec. V(BR)DSS, TJ V(BR)DSS, TJ 150 150 *3 Surface mounted on FR-4 board, t www.kexin.com.cn 1 SMD Type KRF7379 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = 250 A VGS = 0V, ID = 250 A ID = 1mA,Reference to 25 ID = 1mA,Reference to 25 VGS = 10V, ID = 5.8A*1 VGS = 4.5V, ID = 4.9A*1 VGS = -10V, ID = -4.3A*1 VGS = -4.5V, ID = -3.7A*1 VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A VDS = 15V, ID = 2.4A*1 V...