Power MOSFET. KRF7379 Datasheet

KRF7379 MOSFET. Datasheet pdf. Equivalent

Part KRF7379
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7379 IC IC Features Generation V Technology Ultra Low On-Resistanc.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7379 Datasheet



KRF7379
SMD Type
HEXFET Power MOSFET
KRF7379
Features
Generation V Technology
Ultra Low On-Resistance
Complimentary Half Bridge
Surface Mount
Fully Avalanche Rated
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain Current, VGS @ 10V @ Ta = 25
ID
Continuous Drain Current, VGS @ 10V @ Ta = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation
@Ta= 25
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Peak Diode Recovery dv/dt *2
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *3
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 N-Channel ISD 2.4A, di/dt 73A/ s, VDD
P-Channel ISD -1.8A, di/dt 90A/ s, VDD
*3 Surface mounted on FR-4 board, t 10sec.
V(BR)DSS, TJ
V(BR)DSS, TJ
150
150
N-Channel
P-Channel
30 -30
5.8 -4.3
4.6 -3.4
46 -34
2.5
0.02
20
5.0 -5.0
-55 to + 150
50
Unit
V
A
W
W/
V
V/ns
/W
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KRF7379
SMD Type
ICIC
KRF7379
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Symbol
Testconditons
VGS = 0V, ID = 250 A
V(BR)DSS
VGS = 0V, ID = 250 A
V(BR)DSS/ ID = 1mA,Reference to 25
TJ ID = 1mA,Reference to 25
RDS(on)
VGS = 10V, ID = 5.8A*1
VGS = 4.5V, ID = 4.9A*1
RDS(on)
VGS = -10V, ID = -4.3A*1
VGS = -4.5V, ID = -3.7A*1
VGS(th)
gfs
VDS = VGS, ID = 250 A
VDS = VGS, ID = -250 A
VDS = 15V, ID = 2.4A*1
VDS = -24V, ID = -1.8A*1
VDS = 24V, VGS = 0V
VDS = -24V, VGS = 0V
IDSS
VDS = 24V, VGS = 0V, TJ = 125
VDS = -24V, VGS = 0V, TJ = 125
Gate-to-Source Forward Leakage
IGSS VGS = 20V
Total Gate Charge
N-Channel
Qg
ID = 2.4A,VDS = 24V,VGS =10V
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Qgs
P-Channel
ID = -1.8A,VDS = -24V,VGS = -10V
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
N-Channel
VDD = 15V,ID = 2.4A,RG = 6.0
RD=6.2
P-Channel
VDD = -15V,ID = -1.8A,RG = 6.0
RD=8.2
Fall Time
tf
Internal Drain Inductace
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
LD
Between lead, 6mm (0.25in.) from
package and center of die contact
LS
N-Channel
Ciss
VGS = 0V,VDS = 25V,f = 1.0MHz
Coss
Crss
P-Channel
VGS = 0V,VDS = -25V,f = 1.0MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min Typ Max Unit
30
V
-30
0.032
-0.037
V/
0.038 0.045
0.055 0.075
0.070 0.090
0.130 0.180
1.0
V
-1.0
5.2
S
2.5
1.0
-1.0
A
25
-25
100
100
25
25
2.9
nC
2.9
7.9
9.0
6.8
11
21
17
ns
22
25
7.7
18
4.0
4.0
nH
6.0
6.0
520
440
180
pF
200
72
93
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