Power MOSFET. KRF7389 Datasheet

KRF7389 MOSFET. Datasheet pdf. Equivalent

Part KRF7389
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7389 IC IC Features Generation V Technology Ultra Low On-Resistanc.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7389 Datasheet



KRF7389
SMD Type
HEXFET Power MOSFET
KRF7389
Features
Generation V Technology
Ultra Low On-Resistance
Complimentary Half Bridge
Surface Mount
Fully Avalanche Rated
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain Current Ta = 25
ID
Continuous Drain Current Ta = 70
ID
Pulsed Drain Current *1
IDM
Continuous Source Current (Diode Conduction)
IS
Power Dissipation
@Ta= 25
@Ta= 70
PD
Gate-to-Source Voltage
VGS
Single Pulse Avalanche Energy
EAS
IAR
Repetitive Avalanche Energy
EAR
Peak Diode Recovery dv/dt *2
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *3
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 N-Channel ISD 4.0A, di/dt 74A/ s, VDD V(BR)DSS, TJ 150
P-Channel ISD -2.8A, di/dt 1500A/ s, VDD V(BR)DSS, TJ 150
*3 Surface mounted on FR-4 board, t 10sec.
N-Channel
P-Channel
30 -30
7.3 -5.3
5.9 -4.2
30 -30
2.5 -2.5
2.5
1.6
20
82 140
4.0 -2.8
0.20
3.8 -2.2
-55 to + 150
50
Unit
V
A
W
V
mJ
A
mJ
V/ns
/W
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KRF7389
SMD Type
ICIC
KRF7389
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Symbol
Testconditons
VGS = 0V, ID = 250 A
V(BR)DSS
VGS = 0V, ID = 250 A
V(BR)DSS/ ID = 1mA,Reference to 25
TJ ID = 1mA,Reference to 25
VGS = 10V, ID = 5.8A*1
RDS(on)
VGS = 4.5V, ID = 4.7A*1
VGS = -10V, ID = -4.9A*1
RDS(on)
VGS = -4.5V, ID = -3.6A*1
VGS(th)
gfs
VDS = VGS, ID = 250 A
VDS = VGS, ID = -250 A
VDS = 15V, ID = 5.8A*1
VDS = -15V, ID = -4.9A*1
IDSS
VDS = 24V, VGS = 0V
VDS = -24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 55
VDS = -24V, VGS = 0V, TJ = 55
Gate-to-Source Forward Leakage
IGSS VGS = 20V
Total Gate Charge
N-Channel
Qg
ID = 5.8A,VDS = 15V,VGS =10V
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Qgs
P-Channel
ID = -4.9A,VDS = -15V,VGS = -10V
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
N-Channel
VDD = 15V,ID = 1.A,RG = 6.0
RD=15
P-Channel
VDD = -15V,ID = -1.8A,RG = 6.0
RD=15
Input Capacitance
N-Channel
Ciss
VGS = 0V,VDS = 25V,f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Coss
Crss
P-Channel
VGS = 0V,VDS = -25V,f = 1.0MHz
Continuous Source Current Body Diode)
IS
Pulsed Source Current Body Diode) *2
ISM
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min Typ Max Unit
30
V
-30
0.022
0.022
V/
0.023 0.029
0.032 0.046
0.042 0.058
.076 0.098
1
V
-1.0
14
S
7.7
1.0
-1.0
A
25
-25
100
nA
100
22 33
23 34
2.6 3.9
nC
3.8 5.7
6.4 9.6
5.9 8.9
8.1 12
13 19
8.9 13
13 20
ns
26 39
34 51
17 26
32 48
650
710
320
pF
380
130
180
2.5
-2.5
A
30
-30
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