Power MOSFET. KRF7410 Datasheet

KRF7410 MOSFET. Datasheet pdf. Equivalent

Part KRF7410
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7410 IC IC Features Ultra Low On-Resistance P-Channel MOSFET Surfa.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7410 Datasheet




KRF7410
SMD Type
HEXFET Power MOSFET
KRF7410
Features
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain- Source Voltage
VDS
Continuous Drain Current, VGS @ -4.5V @ Ta = 25
ID
Continuous Drain Current, VGS @ -4.5V @ Ta = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation *2
@Ta= 25
PD
Power Dissipation *2
@Ta = 70
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *3
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 Surface mounted on 1 in square Cu board, t 10sec.
Rating
-20
-16
-13
-65
2.5
1.6
20
8
-55 to + 150
50
Unit
V
A
W
W
mW/
V
/W
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KRF7410
SMD Type
ICIC
KRF7410
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Testconditons
V(BR)DSS VGS = 0V, ID = -250 A
V(BR)DSS/ TJ ID = -1mA,Reference to 25
VGS = -4.5V, ID = -16A*1
RDS(on)
VGS = -2.5V, ID = -13.6A*1
VGS = -1.8V, ID = -11.5A*1
VGS(th)
VDS = VGS, ID = -250 A
gfs VDS = -10V, ID = -16A*1
IDSS
IGSS
VDS = -9.6V, VGS = 0V
VDS = -9.6V, VGS = 0V, TJ = 70
VGS = -8V
VGS = 8V
Qg ID = -16A
Qgs VDS = -9.6V
Qgd VGS = -4.5V,*1
td(on)
VDD = -6V,VGS=-4.5V
tr ID = -1.0A
td(off)
RG = 6
tf RD = 6 *1
Ciss VGS = 0V
Coss
VDS = -10V
Crss f = 1.0MHz
Continuous Source Current Body Diode)
IS
Pulsed Source Current Body Diode) *2
ISM
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
VSD TJ = 25 , IS = -2.5A, VGS = 0V*1
trr TJ = 25 , IF =-2.5A
Qrr di/dt = 100A/ s*1
*1 Pulse width 400 s; duty cycle 2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
Min Typ Max Unit
-12 V
0.006
V/
7
9
13
-0.4 -0.9 V
55 S
-1.0
A
-25
-100
100
nA
91
18 nC
25
13 20
12 18
271 407
ns
200 300
8676
2344
pF
1604
-2.5
A
-65
-1.2
97 145
134 201
V
ns
C
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