HEXFET Power MOSFET
SMD Type
HEXFET Power MOSFET KRF7410
IC IC
Features
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available i...
Description
SMD Type
HEXFET Power MOSFET KRF7410
IC IC
Features
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel
Absolute Maximum Ratings Ta = 25
Parameter Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V @ Ta = 25 Continuous Drain Current, VGS @ -4.5V @ Ta = 70 Pulsed Drain Current *1 Power Dissipation *2 Power Dissipation *2 Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Maximum Junction-to-Ambient *3 VGS TJ, TSTG R
JA
Symbol VDS ID ID IDM @Ta= 25 @Ta = 70 PD PD
Rating -20 -16 -13 -65 2.5 1.6 20 8 -55 to + 150 50
Unit V
A
W W mW/ V
/W
*1 Repetitive rating; pulse width limited by max. junction temperature. *2 Surface mounted on 1 in square Cu board, t 10sec.
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1
SMD Type
KRF7410
Electrical Characteristics Ta = 25
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Symbol V(BR)DSS
V(BR)DSS/
IC IC
Testconditons VGS = 0V, ID = -250 A TJ ID = -1mA,Reference to 25 VGS = -4.5V, ID = -16A*1
Min -12
Typ
Max
Unit V
0.006 7 9 13 -0.4 55 -1.0 -25 -100 100 91 18 25 13 12 271 20 18 407 300 -0.9
V/
Static Drain-to-Source On-Resistance
RDS(on)
VGS = -2.5V, ID = -13.6A*1 VGS = -1.8V, ID = -11.5A*1
Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time F...
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