Power MOSFET. KRF7494 Datasheet

KRF7494 MOSFET. Datasheet pdf. Equivalent

Part KRF7494
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7494 IC IC Features High frequency DC-DC converters Absolute Maxi.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7494 Datasheet




KRF7494
SMD Type
HEXFET Power MOSFET
KRF7494
Features
High frequency DC-DC converters
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Continuous Drain Current, VGS @ 10V,Ta = 25
ID
Continuous Drain Current, VGS @ 10V,TA = 100
ID
Pulsed Drain Current*1
IDM
Power Dissipation Ta = 25 *1
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Drain-Source Voltage
VDS
Operating Junction and Storage Temperature Range TJ,TSTG
Junction-to-Ambient
R JA
Junction-to-Drain Lead
R JL
Single Pulse Avalanche Energy*3
EAS
Avalanche Current *2
IAR
*1 Pulse width 400 s; duty cycle 2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
*3 Starting TJ = 25 , L = 77mH,RG = 25 , IAS = 3.1A.
Rating
5.2
3.7
42
3
0.02
20
150
-55 to + 150
50
20
370
3.1
Unit
A
W
W/
V
V
/W
/W
mJ
A
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KRF7494
SMD Type
ICIC
KRF7494
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Symbol
Testconditons
V(BR)DSS
VGS = 0V, ID = 250 A
V(BR)DSS/ TJ ID = 1mA,Reference to 25
RDS(on)
VGS = 10V, ID = 3.1A*1
VGS(th)
VDS = VGS, ID = 250 A
gfs VDS = 50V, ID = 5.2A*1
VDS = 120V, VGS = 0V
IDSS
VDS = 120V, VGS = 0V, TJ = 125
IGSS
VGS = 20V
VGS = -20V
Qg ID = 3.1A
Qgs VDS = 75V
Qgd VGS = 10V,*1
td(on)
VDD = 100V
tr ID = 3.1A
td(off)
RG =6.5
tf VGS=10V
Ciss VGS = 0V
Coss
VDS = 25V
Crss ƒ= 1.0MHz
Coss
VGS = 0V, VDS = 1.0V, f = 1.0MHz
Coss
VGS = 0V, VDS = 120V, f= 1.0MHz
Coss eff. VGS = 0V, VDS = 0V to 120V
Min Typ Max Unit
150 V
0.15 V/
35 44 m
2.5 4.5 V
12 S
1.0
A
250
100
-100
nA
36 54
7.5 nC
13
15
13
ns
36
14
1750
220
100
pF
870
120
170
Continuous Source Current Body Diode)
Pulsed Source Current Body Diode) *2
IS
ISM
2.7
A
42
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
VSD TJ = 25 , IS = 3.1A, VGS = 0V*1
1.3 V
trr TJ = 25 , IF = 3.1A.VDD=25V
55 ns
Qrr di/dt = 100A/ s*1
140 nC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
*1 Pulse width 400µs; duty cycle 2%.
*2 Repetitive rating; pulse width limited bymax
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