Power MOSFET. KRF7503 Datasheet

KRF7503 MOSFET. Datasheet pdf. Equivalent

Part KRF7503
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7503 IC IC Features Generation V Technology Ulrtra Low On-Resistan.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7503 Datasheet



KRF7503
SMD Type
HEXFET Power MOSFET
KRF7503
Features
Generation V Technology
Ulrtra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile ( 1.1mm)
Available in Tape & Reel
Fast Switching
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Continuous Drain Current, VGS @ 10V,Ta = 25
Continuous Drain Current, VGS @ 10V,TA = 70
Pulsed Drain Current*1
Power Dissipation Ta = 25 *1
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt*1
Junction and Storage Temperature Range
Junction-to-Ambient *2
* ISD 1.7A, di/dt 120A/ s, VDD V(BR)DSS,TJ
*2 Surface mounted on FR-4 board, t 10sec.
Symbol
ID
ID
IDM
PD
VGS
dv/dt
TJ, TSTG
R JA
150
Rating
2.4
1.9
14
1.25
10
12
5
-55 to + 150
100
Unit
A
W
mW/
V
V/ns
/W
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KRF7503
SMD Type
ICIC
KRF7503
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current Body Diode)
Symbol
Testconditons
V(BR)DSS
VGS = 0V, ID = 250 A
V(BR)DSS/ TJ ID = 1mA,Reference to 25
RDS(on)
VGS = 10V, ID = 1.7A*1
VGS = 4.5V, ID =0.85A*1
VGS(th)
VDS = VGS, ID = 250 A
gfs VDS = 10V, ID = 0.85A*1
VDS = 24V, VGS = 0V
IDSS
VDS = 24V, VGS = 0V, TJ = 125
IGSS
VGS = -20V
VGS = 20V
Qg ID = 1.7A
Qgs VDS = 24V
Qgd VGS = 10V,*1
td(on)
VDD = 15V
tr ID = 1.7A
td(off)
RG =6.0
tf RD = 8.7
Ciss VGS = 0V
Coss
VDS = 25V
Crss f = 1.0MHz
IS
Pulsed Source Current Body Diode) *2
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
*1 Pulse width 300┬Ás; duty cycle 2%.
*2 Repetitive rating; pulse width limited bymax
ISM
VSD
trr
Qrr
TJ = 25 , IS = 1.7A, VGS = 0V*1
TJ = 25 , IF = 1.7A.VR=10V
di/dt = 100A/ s*1
Min Typ Max Unit
30 V
0.059
V/
0.135
0.222
1.0 V
1.9 S
1.0
A
25
-100
100
nA
7.8 12
1.2 1.8 nC
2.5 3.8
4.7
10
ns
12
5.3
210
80 pF
32
1.25
A
14
1.2 V
40 60 ns
48 72 nC
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