Power MOSFET. KRF7504 Datasheet

KRF7504 MOSFET. Datasheet pdf. Equivalent

Part KRF7504
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7504 Features Generation V Technology Ultra Low On-Resistance Dual P.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7504 Datasheet




KRF7504
SMD Type
HEXFET Power MOSFET
KRF7504
Features
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Continuous Drain Current, VGS @ -4.5V @ TA = 25
ID
Continuous Drain Current, VGS @ -4.5V @ TA = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation *2
@TA= 25
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Peak Diode Recovery dv/dt *3
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *2
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 Surface mounted on FR-4 board, t 10sec
*3 ISD -1.2A, di/dt 100A/ s, VDD V(BR)DSS,TJ 150
Rating
-1.7
-1.4
-9.6
1.25
10
12
-5.0
-55 to + 150
100
Unit
A
W
m W/
V
V/ns
/W
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KRF7504
SMD Type
ICIC
KRF7504
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Testconditons
V(BR)DSS VGS = 0V, ID = -250 A
V(BR)DSS/ TJ ID = -1mA,Reference to 25
RDS(on)
VGS = -4.5V, ID = -1.2A*1
VGS = -2.7V, ID = -0.60A*1
VGS(th)
VDS = VGS, ID = -250 A
gfs VDS = -10V, ID = -0.60A*1
IDSS
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 125
IGSS
VGS = -12V
VGS = 12V
Qg ID = -1.2A
Qgs VDS = -16V
Qgd VGS = -4.5V
td(on)
VDD = -10V
tr ID = -1.2A
td(off)
RD = 8.3
tf Rg = 6
Ciss VGS = 0V
Coss
VDS = -15V
Crss f = 1.0MHz
Min Typ Max Unit
-20 V
-0.012
V/
0.27
0.40
-0.7 V
1.3 S
-1.0
A
-25
-100
nA
100
5.4 8.2
0.96 1.4 nC
2.4 3.6
9.1
35
ns
38
43
240
130 pF
64
Continuous Source Current Body Diode)
Pulsed Source Current Body Diode) *2
IS
ISM
-1.25
-9.6
A
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
VSD TJ = 25 , IS = -1.2A, VGS = 0V*1
-1.2 V
trr TJ = 25 , IF =-1.2A
52 78 ns
Qrr di/dt = 100A/ s*1
63 95 nC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
*1 Pulse width 300 s; duty cycle 2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
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