Power MOSFET. KRF7509 Datasheet

KRF7509 MOSFET. Datasheet pdf. Equivalent

Part KRF7509
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7509 IC IC Features Generation V Technology Ultra Low On-Resistanc.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7509 Datasheet




KRF7509
SMD Type
HEXFET Power MOSFET
KRF7509
Features
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain Current, VGS @ 10V @ Ta = 25
ID
Continuous Drain Current, VGS @ 10V @ Ta = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation
Power Dissipation
@Ta= 25
@Ta= 70
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Gate-to-Source Voltage Single Pulse tp<10 S
VGSM
Peak Diode Recovery dv/dt *2
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *3
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 N-Channel ISD 1.7A, di/dt 120A/ s, VDD
P-Channel ISD -1.2A, di/dt 160A/ s, VDD
*3 Surface mounted on FR-4 board, t 10sec.
V(BR)DSS, TJ
V(BR)DSS, TJ
150
150
N-Channel
P-Channel
30 -30
2.7 -2
2.1 -1.6
21 -16
1.25
0.8
10
20
30
5.0
-55 to + 150
100
Unit
V
A
W
m W/
V
V/ns
/W
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KRF7509
SMD Type
ICIC
KRF7509
Electrical Characteristics TJ = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Symbol
Testconditons
VGS = 0V, ID = 250 A
V(BR)DSS
VGS = 0V, ID = -250 A
V(BR)DSS/ ID = 1mA,Reference to 25
TJ ID = -1mA,Reference to 25
RDS(on)
VGS =10V, ID = 1.7A*1
VGS = 4.5V, ID = 0.85A*1
RDS(on)
VGS = -10V, ID = -1.2A*1
VGS = -4.5V, ID = -0.6A*1
VGS(th)
gfs
VDS = VGS, ID = 250 A
VDS = VGS, ID = -250 A
VDS = 10V, ID = 0.85A*1
VDS = -10V, ID = -0.6A*1
VDS = 24V, VGS = 0V
IDSS
VDS = -24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125
VDS = -24V, VGS = 0V, TJ = 125
Gate-to-Source Forward Leakage
IGSS VGS = 20V
Total Gate Charge
N-Channel
Qg
ID = 1.7A,VDS = 24V,VGS =10V
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Qgs
P-Channel
ID = -1.2A,VDS = -24V,VGS = -10V
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
N-Channel
VDD = 15V,ID = 1.7A,RG = 6.1
RD=8.7
P-Channel
VDD = -15V,ID = -1.2A,RG = 6.2
RD=12
Fall Time
tf
Input Capacitance
N-Channel
Ciss
VGS = 0V,VDS = 25V,f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Coss
Crss
P-Channel
VGS = 0V,VDS = -25V,f = 1.0MHz
Continuous Source Current Body Diode)
IS
Pulsed Source Current Body Diode) *2
ISM
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min Typ Max Unit
30
V
-30
0.059
0.039
V/
0.09 0.110
0.14 0.175
0.17 0.20
0.30 0.40
1.0
V
-1.0
1.9
S
0.92
1.0
A
-1.0
25
-25
100
7.8 12
7.5 11
1.2 1.8
nC
1.3 1.9
2.5 3.8
2.5 3.7
4.7
9.7
10
12
ns
12
19
5.3
9.3
210
180
80
pF
87
32
42
1.25
-1.25
A
21
-16
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