Power MOSFET. KRF7530 Datasheet

KRF7530 MOSFET. Datasheet pdf. Equivalent

Part KRF7530
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7530 IC IC Features Trench Technology Ultra Low On-Resistance Dual.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7530 Datasheet




KRF7530
SMD Type
HEXFET Power MOSFET
KRF7530
Features
Trench Technology
Ultra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile ( 1.1mm)
Available in Tape & Reel
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain- Source Voltage
VDS
Continuous Drain Current, VGS @ 4.5V,Ta = 25
ID
Continuous Drain Current, VGS @ 4.5V,TA = 70
ID
Pulsed Drain Current*1
IDM
Power Dissipation Ta = 25
PD
Power Dissipation Ta = 70
PD
Linear Derating Factor
Single Pulse Avalanche Energy *2
EAS
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
TJ, TSTG
Junction-to-Ambient *1
R JA
1* Surface mounted on FR-4 board, t 10sec.
*2 Starting TJ = 25 , L = 2.6mH,RG = 25 , IAS = 5.0A.
Rating
20
5.4
4.3
40
1.3
0.8
10
33
12
-55 to + 150
100
Unit
A
A
W
mW/
mJ
V
/W
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KRF7530
SMD Type
ICIC
KRF7530
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current Body Diode)
Symbol
Testconditons
V(BR)DSS
VGS = 0V, ID = 250 A
V(BR)DSS/ TJ ID = 1mA,Reference to 25
RDS(on)
VGS = 4.5V, ID = 5.4A*1
VGS = 2.5V, ID =4.6A*1
VGS(th)
VDS = VGS, ID = 250 A
gfs VDS = 10V, ID = 5.4A*1
IDSS
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 70
IGSS
VGS = 12V
VGS = -12V
Qg ID = 5.4A
Qgs VDS = 16V
Qgd VGS = 4.5V,*1
td(on)
VDD =10V
tr ID = 1.0A
td(off)
RG =6.0
tf RD = 10
Ciss VGS = 0V
Coss
VDS = 15V
Crss f = 1.0MHz
IS
Pulsed Source Current Body Diode) *2
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
*1 Pulse width 400 s; duty cycle 2%.
*2 Repetitive rating; pulse width limited bymax
ISM
VSD
trr
Qrr
TJ = 25 , IS = 1.3A, VGS = 0V*1
TJ = 25 , IF = 1.3A.VR=10V
di/dt = 100A/ s*1
Min Typ Max Unit
20 V
0.01 V/
0.030
0.045
0.60 1.2 V
13 S
1.0
A
25
-100
100
nA
18 26
3.4 5.1 nC
3.4 5.1
8.5
11
ns
36
16
1310
180 pF
150
1.3
A
40
1.2 V
19 29 ns
13 20 nC
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