KRF7530

SMD Type HEXFET Power MOSFET KRF7530 IC IC Features Trench Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Absolute Maximum Ratings Ta = 25 Parameter Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V,Ta = 25 Continuous Drain Current, VGS @ 4.5V,TA = 70 Pulsed Drain Current*1 Power Dissipation Ta = 25 Power Dissipation Ta = 70 Linear Derating Factor Single Pulse Avalanche Energy *2 Gate-to-Source Voltage Junction and Storage Temperature Range Junction-to-Ambient *1 1* Surface mounted on FR-4 board, t 10sec. EAS VGS TJ, TSTG R JA Symbol VDS ID ID IDM PD PD Rating 20 5.4 4.3 40 1.3 0.8 10 33 12 -55 to + 150 100 /W mW/ mJ V W A Unit A *2 Starting TJ = 25 , L = 2.6mH,RG = 25 , IAS = 5.0A. www.kexin.com.cn 1 SMD Type KRF7530 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 400 s; duty cycle 2%. Body Diode) Qg Qgs Qgd td(on) tr ...