Power MOSFET. KRF7555 Datasheet

KRF7555 MOSFET. Datasheet pdf. Equivalent

Part KRF7555
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7555 IC IC Features Trench Technology Ultra Low On-Resistance Dual.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7555 Datasheet




KRF7555
SMD Type
HEXFET Power MOSFET
KRF7555
Features
Trench Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile ( 1.1mm)
Available in Tape & Reel
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain Current, VGS @ -4.5V @ TA = 25
ID
Continuous Drain Current, VGS @ -4.5V @ TA = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation *2
Power Dissipation *2
@TA= 25
@TA= 70
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Single Pulse Avalanche Energy*2
EAS
Peak Diode Recovery dv/dt *3
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *2
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 Surface mounted on FR-4 board, t 10sec
*3 ISD -2.0A, di/dt -140A/ s, VDD V(BR)DSS,TJ 150
Rating
-20
-4.3
-3.4
-34
1.25
0.8
10
12
36
1.1
-55 to + 150
100
Unit
A
W
W
m W/
V
Mj
V/ns
/W
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KRF7555
SMD Type
ICIC
KRF7555
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current Body Diode)
Symbol
Testconditons
V(BR)DSS VGS = 0V, ID = -250 A
V(BR)DSS/ TJ ID = -1mA,Reference to 25
RDS(on)
VGS = -4.5V, ID = -4.3A*1
VGS = -2.5V, ID = -3.4A*1
VGS(th)
VDS = VGS, ID = -250 A
gfs VDS = -10V, ID = -0.8A*1
IDSS
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 125
IGSS
VGS = -12V
VGS = 12V
Qg ID = -3.0A
Qgs VDS = -10V
Qgd VGS = -5.0V
td(on)
VDD = -10V
tr ID = -2.0A
td(off)
RD = 5.0
tf Rg = 6.0
Ciss VGS = 0V
Coss
VDS = -10V
Crss f = 1.0MHz
IS
Pulsed Source Current Body Diode) *2
ISM
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
VSD TJ = 25 , IS = -1.6A, VGS = 0V*1
trr TJ = 25 , IF =-2.5A
Qrr di/dt = -100A/ s*1
*1 Pulse width 300 s; duty cycle 2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
Min Typ Max Unit
-20 V
-0.005
V/
0.055
0.105
-0.6 -1.2 V
2.5 S
-1.0
A
-25
-100
100
nA
10 15
2.1 3.1 nC
2.5 3.7
10
46
ns
60
64
1066
402 pF
126
-1.3
A
-34
-1.2 V
54 82 ns
41 61 nC
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