Power MOSFET. KRF7601 Datasheet

KRF7601 MOSFET. Datasheet pdf. Equivalent

Part KRF7601
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7601 Features Generation V Technology Ultra Low On-Resistance N-Chan.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7601 Datasheet




KRF7601
SMD Type
HEXFET Power MOSFET
KRF7601
Features
Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
Very Small SOIC Package
Low Profile ( 1.1mm)
Available in Tape & Reel
Fast Switching
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Continuous Drain Current, VGS @ 4.5V,Ta = 25
Continuous Drain Current, VGS @ 4.5V,TA = 70
Pulsed Drain Current*1
Power Dissipation Ta = 25 *1
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt*1
Junction and Storage Temperature Range
Junction-to-Ambient *2
* ISD 3.8A, di/dt 96A/ s, VDD V(BR)DSS,TJ
*2 Surface mounted on FR-4 board, t 10sec.
Symbol
ID
ID
IDM
PD
VGS
dv/dt
TJ, TSTG
R JA
150
Rating
5.7
4.6
30
1.8
14
12
5
-55 to + 150
70
Unit
A
W
W/
V
V/ns
/W
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KRF7601
SMD Type
ICIC
KRF7601
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current Body Diode)
Symbol
Testconditons
V(BR)DSS
VGS = 0V, ID = 250 A
V(BR)DSS/ TJ ID = 1mA,Reference to 25
RDS(on)
VGS = 4.5V, ID = 3.8A*1
VGS = 2.7V, ID =1.9A*1
VGS(th)
VDS = VGS, ID = 250 A
gfs VDS = 10V, ID = 1.9A*1
IDSS
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125
IGSS
VGS = 12V
VGS = -12V
Qg ID = 3.8A
Qgs VDS = 16V
Qgd VGS = 4.5V,*1
td(on)
VDD = 10V
tr ID = 3.8A
td(off)
RG =6.2
tf RD = 2.6
Ciss VGS = 0V
Coss
VDS = 15V
Crss ƒ= 1.0MHz
IS
Pulsed Source Current Body Diode) *2
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
*1 Pulse width 300µs; duty cycle 2%.
*2 Repetitive rating; pulse width limited bymax
ISM
VSD
trr
Qrr
TJ = 25 , IS = 3.8A, VGS = 0V*1
TJ = 25 , IF = 3.8A.VR=10V
di/dt = 100A/ s*1
Min Typ Max Unit
20 V
0.024
V/
0.035
0.050
0.70 V
6.1 S
1.0
A
25
-100
100
nA
14 22
2.0 3.0 nC
6.3 9.5
5.1
47
ns
24
32
650
300 pF
150
1.8
A
30
1.2 V
51 77 ns
69 100 nC
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