Power MOSFET. KRF7606 Datasheet

KRF7606 MOSFET. Datasheet pdf. Equivalent

Part KRF7606
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7606 IC IC Features Generation V Technology Ultra Low On-Resistanc.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7606 Datasheet




KRF7606
SMD Type
HEXFET Power MOSFET
KRF7606
Features
Generation V Technology
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile ( 1.1mm)
Available in Tape & Reel
Fast Switching
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain Current, VGS @ -10V @ Ta = 25
ID
Continuous Drain Current, VGS @ -10V @ Ta = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation
Power Dissipation
@Ta= 25
@Ta= 70
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Gate-to-Source Voltage Single Pulse tp 10 S
VGSM
Peak Diode Recovery dv/dt *2
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *3
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD -2.4A, di/dt -130A/ s, VDD V(BR)DSS,TJ 150
*3 Surface mounted on FR-4 board, t 10sec.
Rating
-30
-3.6
-2.9
-29
1.8
1.1
14
20
30
-5.0
-55 to + 150
70
Unit
V
A
W
mW/
V
V
V/ns
/W
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KRF7606
SMD Type
ICIC
KRF7606
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Testconditons
V(BR)DSS VGS = 0V, ID = 250 A
V(BR)DSS/ TJ ID = -1mA,Reference to 25
RDS(on)
VGS = -10V, ID = -2.4A*1
VGS = -4.5V, ID = -1.2A*1
VGS(th)
VDS = VGS, ID = -250 A
gfs VDS = -10V, ID = -1.2A*1
IDSS
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125
IGSS
VGS = -20V
VGS = 20V
Qg ID = -2.4A
Qgs VDS = -24V
Qgd VGS = -10V
td(on)
VDD = -10V
tr ID = -2.4A
td(off)
RG = 6
tf RD=4.0
Ciss VGS = 0V
Coss
VDS = -25V
Crss f = 1.0MHz
Continuous Source Current Body Diode)
IS
Pulsed Source Current Body Diode) *2
ISM
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
VSD TJ = 25 , IS = -2.4A, VGS = 0V*1
trr TJ = 25 , IF =-2.4A
Qrr di/dt = -100A/ s*1
*1 Pulse width 300 s; duty cycle 2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
Min Typ Max Unit
-30 V
-0.024
V/
0.075 0.09
m
0.130 0.15
-1.0 V
2.3 S
-1.0
A
-25
-100
nA
100
20 30
2.1 3.1 nC
7.6 11
13
20
ns
43
39
520
300 pF
140
-1.8
A
-29
-1.2 V
43 64 ns
50 76
C
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