Power MOSFET. KRF7663 Datasheet

KRF7663 MOSFET. Datasheet pdf. Equivalent

Part KRF7663
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7663 Features Trench Technology Ultra Low On-Resistance P-Channel MO.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7663 Datasheet



KRF7663
SMD Type
HEXFET Power MOSFET
KRF7663
Features
Trench Technology
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile ( 1.1mm)
Available in Tape & Reel
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain Current, VGS @ -4.5V @ Ta = 25
ID
Continuous Drain Current, VGS @ -4.5V @ Ta = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation
Power Dissipation
@Ta= 25
@Ta= 70
PD
Linear Derating Factor
Single Pulse Avalanche Energy *2
EAS
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *3
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 Starting TJ = 25 , L = 17.8mH,RG = 25 , IAS = -3.6A
*3 When mounted on 1 inch square copper board, t 10 sec
Rating
-20
-8.2
-6.6
-66
1.8
1.15
10
115
12
-55 to + 150
70
Unit
V
A
W
mW/
mJ
V
/W
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KRF7663
SMD Type
ICIC
KRF7663
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Testconditons
V(BR)DSS VGS = 0V, ID = -250 A
V(BR)DSS/ TJ ID = -1mA,Reference to 25
RDS(on)
VGS = -4.5V, ID = -7.0A*1
VGS = -2.5V, ID = -5.1A*1
VGS(th)
VDS = VGS, ID = -250 A
gfs VDS = -10V, ID = -7.0A*1
IDSS
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 70
IGSS
VGS = -12V
VGS = 12V
Qg ID = -6.0A
Qgs VDS = -10V
Qgd VGS = -5V
td(on)
VDD = -10V
tr ID = -6A
td(off)
RG = 6.2
tf RD=1.64
Ciss VGS = 0V
Coss
VDS = -10V
Crss f = 1.0MHz
Continuous Source Current Body Diode)
IS
Pulsed Source Current Body Diode) *2
ISM
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
VSD TJ = 25 , IS = -7A, VGS = 0V*1
trr TJ = 25 , IF =-2.5A
Qrr di/dt = -100A/ s*1
*1 Pulse width 300 s; duty cycle 2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
Min
-20
-0.60
14.5
Typ
-0.01
30
5.0
7.0
11
100
125
172
2520
615
375
Max
0.02
0.04
-1.2
-1.0
-25
-100
100
45
7.5
10.5
Unit
V
V/
V
S
A
nA
nC
ns
pF
-1.8
A
-66
-1.2 V
70 105 ns
50 75
C
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