Power MOSFET. KRF7706 Datasheet

KRF7706 MOSFET. Datasheet pdf. Equivalent

Part KRF7706
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7706 IC IC TSSOP-8 Unit: mm Features Ultra Low On-Resistance P-Ch.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7706 Datasheet




KRF7706
SMD Type
HEXFET Power MOSFET
KRF7706
ICIC
Features
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile ( 1.2mm)
Available in Tape & Reel
TSSOP-8
Unit: mm
1,5,8: Drain
2,3,6,7: Source
4: Gate
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain- Source Voltage
VDS
Continuous Drain Current, VGS @ -10V @ Ta = 25
ID
Continuous Drain Current, VGS @ -10V @ Ta = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation *2
@Ta= 25
PD
Power Dissipation *2
@Ta = 70
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *2
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 Surface mounted on 1 in square Cu board
Rating
-30
-7
-5.7
-28
1.51
0.96
0.01
20
-55 to + 150
83
Unit
V
A
W
W
W/
V
/W
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KRF7706
SMD Type
ICIC
KRF7706
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Testconditons
V(BR)DSS VGS = 0V, ID = -250 A
V(BR)DSS/ TJ ID = -1mA,Reference to 25
RDS(on)
VGS = -10V, ID = -7.0A*1
VGS = -4.5V, ID = -5.6A*1
VGS(th)
VDS = VGS, ID = -250 A
gfs VDS = -10V, ID = -7.0A*1
IDSS
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 70
IGSS
VGS = -20V
VGS = 20V
Qg ID = -7.0A
Qgs VDS = -15V
Qgd VGS = -10V
td(on)
VDD = -15V,VGS=-10V
tr ID = -1.0A
td(off)
RG = 6
tf RD=15
Ciss VGS = 0V
Coss
VDS = -25V
Crss f = 1.0MHz
Continuous Source Current Body Diode)
IS
Pulsed Source Current Body Diode) *2
ISM
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
VSD TJ = 25 , IS = -1.5A, VGS = 0V*1
trr TJ = 25 , IF =-1.5A
Qrr di/dt = -100A/ s*1
*1 Pulse width 300 s; duty cycle 2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
Min Typ Max Unit
-30 V
0.015
V/
22
m
36
-1.0 -2.5 V
6.9 S
-15
A
-25
-100
100
nA
48 72
8.5 nC
8.4
17
46
ns
244
122
2211
339 pF
207
-1.5
A
-28
-1.2 V
34 51 ns
32 48
C
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