KRF7706

SMD Type HEXFET Power MOSFET KRF7706 IC IC TSSOP-8 Unit: mm Features Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.2mm) 1,5,8: Drain 2,3,6,7: Source 4: Gate Available in Tape & Reel Absolute Maximum Ratings Ta = 25 Parameter Drain- Source Voltage Continuous Drain Current, VGS @ -10V @ Ta = 25 Continuous Drain Current, VGS @ -10V @ Ta = 70 Pulsed Drain Current *1 Power Dissipation *2 Power Dissipation *2 Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Maximum Junction-to-Ambient *2 VGS TJ, TSTG R JA Symbol VDS ID ID IDM @Ta= 25 @Ta = 70 PD PD Rating -30 -7 -5.7 -28 1.51 0.96 0.01 20 -55 to + 150 83 Unit V A W W W/ V /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 Surface mounted on 1 in square Cu board www.kexin.com.cn 1 SMD Type KRF7706 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 300 s; duty cyc...