Power MOSFET. KRF7750 Datasheet

KRF7750 MOSFET. Datasheet pdf. Equivalent

Part KRF7750
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7750 IC IC TSSOP-8 Features Ultra Low On-Resistance Dual P-Channe.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7750 Datasheet




KRF7750
SMD Type
HEXFET Power MOSFET
KRF7750
ICIC
Features
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile ( 1.1mm)
Available in Tape & Reel
TSSOP-8
Unit: mm
1,5,8: Drain
2,3,6,7: Source
4: Gate
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain- Source Voltage
VDS
Continuous Drain Current, VGS @ -4.5V @ TC = 25
ID
Continuous Drain Current, VGS @ -4.5V @ TC = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation *2
@TC= 25
PD
Power Dissipation *2
@TC = 70
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *2
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 When mounted on 1 inch square copper board, t 10 sec
Rating
-20
4.7
3.8
38
1.0
0.64
0.008
12
-55 to + 150
125
Unit
V
A
W
W
W/
V
/W
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KRF7750
SMD Type
ICIC
KRF7750
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Testconditons
V(BR)DSS VGS = 0V, ID = -250 A
V(BR)DSS/ TJ ID = -1mA,Reference to 25
RDS(on)
VGS = -4.5V, ID = -4.7A*1
VGS = -2.5V, ID = -3.8A*1
VGS(th)
VDS = VGS, ID = -250 A
gfs VDS = -10V, ID = -4.7A*1
IDSS
VDS = -20V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 70
IGSS
VGS = -12V
VGS = 12V
Qg ID = -4.7A
Qgs VDS = -16V
Qgd VGS = -5.0V
td(on)
VDD = -10V
tr ID = -1.0A
td(off)
RD = 10
tf RG = 24
Ciss VGS = 0V
Coss
VDS = -15V
Crss f = 1.0MHz
Continuous Source Current Body Diode)
IS
Pulsed Source Current Body Diode) *2
ISM
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
VSD TJ = 25 , IS = -1.0A, VGS = 0V*1
trr TJ = 25 , IF =-1.0A
Qrr di/dt = -100A/ s*1
*1 Pulse width 300 s; duty cycle 2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
Min Typ Max Unit
-20 V
0.012
V/
0.030
0.055
-0.45
-1.2 V
11 S
-1.0
A
-25
-100
100
nA
26 39
3.9 5.8 nC
8.0 12
15
54
ns
180
210
1700
380 pF
270
-1.0
A
-38
-1.2 V
26 39 ns
16 24 nC
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