Power MOSFET. KRF7756 Datasheet

KRF7756 MOSFET. Datasheet pdf. Equivalent

Part KRF7756
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7756 IC IC Features Ultra Low On-Resistance Dual P-Channel MOSFET .
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7756 Datasheet



KRF7756
SMD Type
HEXFET Power MOSFET
KRF7756
ICIC
Features
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile ( 1.2mm)
Available in Tape & Reel
TSSOP-8
Unit: mm
1,5,8: Drain
2,3,6,7: Source
4: Gate
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain- Source Voltage
VDS
Continuous Drain Current, VGS @ -4.5V @ TA = 25
ID
Continuous Drain Current, VGS @ -4.5V @ TA = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation *2
@TA= 25
PD
Power Dissipation *2
@TA = 70
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *2
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 Surface mounted on FR-4 board, 10sec
Rating
-12
-4.3
-3.5
-17
1.0
0.64
8
8
-55 to + 150
125
Unit
V
A
W
W
m W/
V
/W
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KRF7756
SMD Type
ICIC
KRF7756
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current Body Diode)
Symbol
Testconditons
V(BR)DSS VGS = 0V, ID = -250 A
V(BR)DSS/ TJ ID = -1mA,Reference to 25
VGS = -4.5V, ID = -4.3A*1
RDS(on) VGS = -2.5V, ID = -3.4A*1
VGS = -1.8V, ID = -2.2A*1
VGS(th)
VDS = VGS, ID = -250 A
gfs VDS = -10V, ID = -4.3A*1
IDSS
VDS = -9.6V, VGS = 0V
VDS = -9.6V, VGS = 0V, TJ = 70
IGSS
VGS = -8.0V
VGS = 8.0V
Qg ID = -4.3A
Qgs VDS = -6.0V
Qgd VGS = -4.5V
td(on)
VDD = -6V
tr ID = -1.0A
td(off)
RD = 6
tf VGS = -4.5V
Ciss VGS = 0V
Coss
VDS = -10V
Crss f = 1.0MHz
IS
Pulsed Source Current Body Diode) *2
ISM
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
VSD TJ = 25 , IS = -1.0A, VGS = 0V*1
trr TJ = 25 , IF =-1.0A
Qrr di/dt = -100A/ s*1
*1 Pulse width 400 s; duty cycle 2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
Min Typ Max Unit
-12 V
-0.006
V/
0.040
0.058
0.087
-0.4 -0.9 V
13 S
-1.0
A
-25
-100
nA
100
12 18
1.8 2.7 nC
2.9 4.4
12
18
ns
160
170
1400
310 pF
240
-1.0
A
-17
-1.2 V
35 53 ns
20 30 nC
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