KRF8910

SMD Type HEXFET Power MOSFET KRF8910 IC IC Features Absolute Maximum Ratings Ta = 25 Parameter Drain- Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Ta = 25 Continuous Drain Current,VGS @ 10V TC = 70 Pulsed Drain Current *1 Maximum Power Dissipation Ta = 25 Maximum Power Dissipation Ta = 70 Linear Derating Factor Operating Junction and Storage Temperature Range Junction-to-Drain Lead Maximum Junction-to-Ambient *2,3 Single Pulse Avalanche Energy *4 Avalanche Current *1 TJ,TSTG R JL Symbol VDS VGS ID ID IDM PD Rating 20 20 10 8.3 82 2 1.3 0.016 -55 to + 150 20 62.5 19 8.2 Unit V A W /W /W mJ A R JA EAS IAR *1 Repetitive rating; pulse width limited by max. junction temperature. *2 when mounted on 1 inch square copper board. *3 R is measured at TJ of approxmately 90 *4Starting TJ = 25 , L = 0.57mH, RG = 25 , IAS = 8.2A. www.kexin.com.cn 1 SMD Type KRF8910 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Re...