Power MOSFET. KRF8910 Datasheet

KRF8910 MOSFET. Datasheet pdf. Equivalent

Part KRF8910
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF8910 IC IC Features Absolute Maximum Ratings Ta = 25 Parameter Dr.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF8910 Datasheet




KRF8910
SMD Type
Features
HEXFET Power MOSFET
KRF8910
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain- Source Voltage
VDS
Gate-to-Source Voltage
VGS
Continuous Drain Current, VGS @ 10V Ta = 25
ID
Continuous Drain Current,VGS @ 10V TC = 70
ID
Pulsed Drain Current *1
IDM
Maximum Power Dissipation Ta = 25
Maximum Power Dissipation Ta = 70
PD
Linear Derating Factor
Operating Junction and Storage Temperature Range TJ,TSTG
Junction-to-Drain Lead
R JL
Maximum Junction-to-Ambient *2,3
R JA
Single Pulse Avalanche Energy *4
EAS
Avalanche Current *1
IAR
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 when mounted on 1 inch square copper board.
*3 R is measured at TJ of approxmately 90
*4Starting TJ = 25 , L = 0.57mH, RG = 25 , IAS = 8.2A.
Rating
20
20
10
8.3
82
2
1.3
0.016
-55 to + 150
20
62.5
19
8.2
Unit
V
A
W
/W
/W
mJ
A
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KRF8910
SMD Type
ICIC
KRF8910
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current Body Diode)
Symbol
Testconditons
BVDSS
VGS = 0V, ID = 250A
V(BR)DSS/ TJ ID = 1mA,Reference to 25
RDS(on)
VGS = 10V, ID = 10A*1
VGS = 4.5V, ID = 8.0A*1
VGS(th)
VDS = VGS, ID = 250 A
VGS(th)/ TJ
VDS = 16V, VGS = 0V
IDSS
VDS = 16V, VGS = 0V, TJ = 125
IGSS
VGS = 20V
VGS = -20V
gfs VDS = 10V, ID = 8.2A
Qg
Qgs1
Qgs2
Qgd
ID = 8.2A,VGS = 4.5V,VDS = 10V
Qgodr
Qsw
Qoss
VDS = 10V, VGS = 0V
td(on)
tr
td(off)
VDD = 10V, VGS = 4.5V,ID = 8.2A
tf
Ciss VGS = 0V
Coss
VDS = 10V
Crss f = 1.0MHz
IS
Pulsed Source Current Body Diode) *2
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
*1 Pulse width 400 s; duty cycle 2%.
*2 Repetitive rating; pulse width limited bymax
ISM
VSD
trr
Qrr
TJ = 25 , IS = 8.2A, VGS = 0V*1
TJ = 25 , IF =8.2A,VDD=10V
di/dt = 100A/ s*1
Min Typ Max Unit
20 V
0.015
V/
10.7 13.4
14.6 18.3
1.65 2.55 V
-4.8 mV/
1.0
A
150
100
-100
nA
24 S
7.4 11
2.4
0.80
2.5 nC
1.7
3.3
4.4
6.2
10
ns
9.7
4.1
960
300 pF
160
2.5
A
82
1.0
17 26
6.5 9.7
V
ns
C
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