Power MOSFET. KRF9610S Datasheet

KRF9610S MOSFET. Datasheet pdf. Equivalent

Part KRF9610S
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF9610S TO-263 Features + 0 .1 1 .2 7 -0 .1 Transistors IC Unit: mm .
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF9610S Datasheet




KRF9610S
SMD Type
TransistIoCrs
HEXFET Power MOSFET
KRF9610S
Features
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
P-Channel
Fast Switching
Simple Drive Requirements
TO-263
+0.2
4.57+0.1 -0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54 5.08+0.2
-0.2 +0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
11Ggaattee
22Ddrraaiinn
33Ssoouurrccee
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Continuous Drain Current, VGS @ -10V,Tc = 25
ID
Continuous Drain Current, VGS @ -10V,Tc = 100
ID
Pulsed Drain Current*1
IDM
Power Dissipation Tc = 25
Power Dissipation (PCB Mount) Ta = 25
PD
Linear Derating Factor
Linear Derating Factor (PCB Mount) *3
Gate-to-Source Voltage
VGS
Inductive Current,.Clamp
ILM
Peak Diode Recovery dv/dt *2
dv/dt
Operating Junction and Storage Temperature Range TJ,TSTG
Junction-to-Case
R JC
Junction-to-Ambient ( PCB Mounted) *3
R JA
Junction-to-Ambient
R JA
*1Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD -1.8A, di/dt 70A/ s, VDD V(BR)DSS,TJ 150
* 3 When mounted on 1" square PCB
Rating
-1.8
-1
-7
20
3
0.16
0.025
20
-7
-5
-55 to + 150
6.4
40
62
Unit
A
W
W/
V
A
V/ns
/W
/W
/W
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KRF9610S
SMD Type
TransistIoCrs
KRF9610S
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Intermal Drain Inductance
Symbol
Testconditons
V(BR)DSS
VGS = 0V, ID =- 250 A
V(BR)DSS/ TJ ID = -1mA,Reference to 25
RDS(on)
VGS = -10V, ID = -0.9A*1
VGS(th)
VDS = VGS, ID = -250 A
gfs VDS = -50V, ID = -0.90A*1
IDSS
VDS = -200V, VGS = 0V
VDS = -160V, VGS = 0V, TJ = 125
IGSS
VGS = 20V
VGS = -20V
Qg ID = -3.5A
Qgs VDS = -160V
Qgd VGS = -10V,*1
td(on)
VDD = -100V
tr ID = -0.90A
td(off)
RG =50
tf RD =110 *1
LD
Min
-200
-2.0
0.90
Typ
-0.23
8.0
15
10
8.0
Max
3.0
-4.0
-100
-500
-100
100
11
7.0
4.0
Unit
V
V/
V
S
A
nA
nC
ns
4.5
Internal Source Inductance
LS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current Body Diode)
Ciss
Coss
Crss
IS
Pulsed Source Current Body Diode) *2
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
*1 Pulse width 300 s; duty cycle 2%.
*2 Repetitive rating; pulse width limited bymax
ISM
VSD
trr
Qrr
ton
7.5 nH
VGS = 0V
VDS = -25V
f = 1.0MHz
170
50 pF
15
-1.8
A
-7.0
TJ = 25 , IS = -1.8A, VGS = 0V*1
-5.8 V
TJ = 25 , IF = -1.8A
240 360 ns
di/dt = 100A/ s*1
1.7 2.69
C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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