Power MOSFET. KRF9952 Datasheet

KRF9952 MOSFET. Datasheet pdf. Equivalent

Part KRF9952
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF9952 IC IC Features Generation V Technology Ultra Low On-Resistanc.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF9952 Datasheet



KRF9952
SMD Type
HEXFET Power MOSFET
KRF9952
ICIC
Features
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Very Low Gate Charge and Switching Losses
Fully Avalanche Rated
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-to-Source Voltage
VGS
Continuous Drain Current, VGS @ 10V @ Ta = 25
ID
Continuous Drain Current, VGS @ 10V @ Ta = 70
ID
Pulsed Drain Current *1
IDM
Continuous Source Current (Diode Conduction)
IS
Power Dissipation
Power Dissipation
@Ta= 25
@Ta= 70
PD
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
Repetitive Avalanche Energy
EAR
Peak Diode Recovery dv/dt *2
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *3
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 N-Channel ISD 2.0A, di/dt 100A/ s, VDD V(BR)DSS, TJ 150
P-Channel ISD -1.3A, di/dt 84A/ s, VDD V(BR)DSS, TJ 150
*3 Surface mounted on FR-4 board, t 10sec.
N-Channel
P-Channel
30
20
3.5 -2.3
2.8 -1.8
16 -10
1.7 -1.3
2
1.3
44 57
2.0 -1.3
0.25
5.0 -5
-55 to + 150
62.5
Unit
V
V
A
A
W
mJ
A
mJ
V/ns
/W
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KRF9952
SMD Type
ICIC
KRF9952
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Symbol
Testconditons
VGS = 0V, ID = 250 A
V(BR)DSS
VGS = 0V, ID = -250 A
V(BR)DSS/ ID = 1mA,Reference to 25
TJ ID = -1mA,Reference to 25
VGS =10V, ID = 2.2A*1
RDS(on)
VGS = 4.5V, ID = 1.0A*1
VGS = -10V, ID = -1.0A*1
RDS(on)
VGS = -4.5V, ID = -0.5A*1
VGS(th)
gfs
VDS = VGS, ID = 250 A
VDS = VGS, ID = -250 A
VDS = 15V, ID = 3.5A*1
VDS = -15V, ID = -2.3A*1
IDSS
VDS = 24V, VGS = 0V
VDS = -24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125
VDS = -24V, VGS = 0V, TJ = 125
Gate-to-Source Forward Leakage
IGSS VGS = 20V
Total Gate Charge
N-Channel
Qg
ID = 1.8A,VDS = 10V,VGS =10V
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Qgs
P-Channel
ID = -2.3A,VDS = -10V,VGS = -10V
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
N-Channel
VDD = 10V,ID = 1.0A,RG = 6.0
RD=10
P-Channel
VDD = -10V,ID = -1.0A,RG = 6.0
RD=10
Fall Time
tf
Input Capacitance
N-Channel
Ciss
VGS = 0V,VDS = 15V,f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Coss
Crss
P-Channel
VGS = 0V,VDS = -15V,f = 1.0MHz
Continuous Source Current Body Diode)
IS
Pulsed Source Current Body Diode) *2
ISM
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min Typ Max Unit
30
V
-30
0.015
0.015
V/
0.08 0.10
0.12 0.15
0.165 0.250
0.290 0.400
1.0
V
-1.0
12
S
2.4
2.0
-2.0
A
25
-25
100 nA
6.9
6.1 12
1.0 2.0
nC
1.7 3.4
1.8 3.5
1.1 2.2
6.2 12
9.7 19
8.8 18
14 28
ns
13 26
20 40
3.0 6.0
6.9 14
190
190
120
pF
110
61
54
1.7
-1.3
A
16
16
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