Power MOSFET. KRFR6215 Datasheet

KRFR6215 MOSFET. Datasheet pdf. Equivalent

Part KRFR6215
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRFR6215 Transistors IC TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 .
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRFR6215 Datasheet




KRFR6215
SMD Type
HEXFET Power MOSFET
KRFR6215
TransistIoCrs
Features
Advanced Process Technology
Surface Mount
175 Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60+0.15
-0.15
0.60+0.1
-0.1
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Continuous Drain Current, VGS @ 10V,Tc = 25
ID
Continuous Drain Current, VGS @ 10V,Tc = 100
ID
Pulsed Drain Current*1
IDM
Power Dissipation TC = 25
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Single Pulse Avalanche Energy*3
EAS
Avalanche Current *1
IAR
Repetitive Avalanche Energy
EAR
Peak Diode Recovery dv/dt *2
dv/dt
Operating Junction and Storage Temperature Range
TJ,TSTG
Junction-to-Case
R JC
Junction-to-Ambient
R JA
Junction-to-Ambient
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD -6.6A, di/dt -620A/ s, VDD V(BR)DSS,TJ 175
*3 Starting TJ = 25 , L = 14mH,RG = 25 , IAS = -6.6A.
Rating
-13
-9
-44
110
0.71
20
310
-6.6
11
5
-55 to + 175
1.4
50
110
Unit
A
W
W/
V
mJ
A
mJ
V/ns
/W
/W
/W
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KRFR6215
SMD Type
TransistIoCrs
KRFR6215
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Symbol
Testconditons
V(BR)DSS VGS = 0V, ID =- 250 A
V(BR)DSS/ TJ ID = -1mA,Reference to 25
RDS(on)
VGS = -10V, ID = -6.6A*1
VGS = -10V, ID = -6.6A, TJ = 150 *1
VGS(th)
VDS = VGS, ID = -250 A
gfs VDS = -50V, ID = -6.6A*1
IDSS
VDS = -150V, VGS = 0V
VDS = -120V, VGS = 0V, TJ = 150
IGSS
VGS = 20V
VGS = -20V
Qg ID = -6.6A
Qgs VDS = -120V
Qgd VGS = -10V,*1
td(on)
VDD = -75V
tr ID = -6.6A
td(off)
RG =6.8
tf RD =12 *1
LD
Min Typ Max Unit
-150
V
-0.02
V/
0.295
0.58
-2.0 -4.0 V
3.6 S
-25
-250
A
100
-100
nA
66
8.1 nC
35
14
36
ns
53
37
4.5 nH
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current Body Diode)
LS
Ciss
Coss
Crss
IS
Pulsed Source Current Body Diode) *2
ISM
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
VSD
trr
Qrr
ton
*1 Pulse width 300 s; duty cycle 2%.
*2 Repetitive rating; pulse width limited bymax
7.5 nH
VGS = 0V
VDS = -25V
f = 1.0MHz
860
220 pF
130
-13
A
-44
TJ = 25 , IS = -6.6A, VGS = 0V*1
-1.6 V
TJ = 25 , IF = -6.6A
160 240 ns
di/dt = 100A/ s*1
1.2 1.7 nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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