KRFR6215

SMD Type HEXFET Power MOSFET KRFR6215 Transistors IC TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features Advanced Process Technology +0.2 9.70-0.2 175 Operating Temperature +0.1 0.80-0.1 P-Channel Fully Avalanche Rated +0.28 1.50-0.1 +0.25 2.65-0.1 Fast Switching 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.15 0.50-0.15 0.127 max +0.15 5.55-0.15 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ 10V,Tc = 25 Continuous Drain Current, VGS @ 10V,Tc = 100 Pulsed Drain Current*1 Power Dissipation TC = 25 Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy*3 Avalanche Current *1 Repetitive Avalanche Energy Peak Diode Recovery dv/dt *2 Operating Junction and Storage Temperature Range Junction-to-Case Junction-to-Ambient Junction-to-Ambient VGS EAS IAR EAR dv/dt TJ,TSTG R R R JC JA JA Symbol ID ID IDM PD Rating -13 -9 -44 110 0.71 20 310 -6.6 11 5 -55 to + 175 1.4 50 110 Unit A W W/ V mJ A mJ V/ns /W /W /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 ISD -6.6A, di/dt -620A/ s, VDD V(BR)DSS,TJ 175 *3 Starting TJ = 25 , L = 14mH,RG = 25 , IAS = -6.6A. 3.80 Surface Mount +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 www.kexin.com.cn 1 SMD Type KRFR6215 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-So...