KRFR9310

SMD Type HEXFET Power MOSFET KRFR9310 Transistors IC TO-252 +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm Features Surface Mount +0.2 9.70-0.2 Fast Switching P-Channel Avanced Process Technology Fully Avalanche Rated +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ -10V,Tc = 25 Continuous Drain Current, VGS @ -10V,Tc = 100 Pulsed Drain Current*1 Power Dissipation Tc = 25 Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy*3 Avalanche Current *1 Repetitive Avalanche Energy *1 Peak Diode Recovery dv/dt *2 Operating Junction and Storage Temperature Range Junction-to-Case Junction-to-Ambient Junction-to-Ambient VGS EAS IAR EAR dv/dt TJ,TSTG R R R JC JA JA Symbol ID ID IDM PD Rating -1.8 -1.1 -7.2 50 0.4 20 92 -1.8 5 -24 -55 to + 150 2.5 50 110 Unit A W W/ V mJ A mJ V/ns /W /W /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 ISD -1.1A, di/dt 450A/ s, VDD V(BR)DSS,TJ 150 *3 Starting TJ = 25 , L = 57 mH,RG = 25 , IAS = -1.8A. 3.80 www.kexin.com.cn 1 SMD Type KRFR9310 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gat...