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C4706 Dataheets PDF



Part Number C4706
Manufacturers Sanken electric
Logo Sanken electric
Description 2SC4706
Datasheet C4706 DatasheetC4706 Datasheet (PDF)

2SC4706 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4706 900 600 7 14(Pulse28) 7 130(Tc=25°C) 150 –55to+150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose (Ta=25°C) 2SC4706 100max 100max 600min 10 to 25 0.5max 1.2max 6typ 160typ V MHz pF 20.0min 4.0max sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=8.

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2SC4706 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4706 900 600 7 14(Pulse28) 7 130(Tc=25°C) 150 –55to+150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose (Ta=25°C) 2SC4706 100max 100max 600min 10 to 25 0.5max 1.2max 6typ 160typ V MHz pF 20.0min 4.0max sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=7A IC=7A, IB=1.4A IC=7A, IB=1.4A VCE=12V, IE=–1.5A VCB=10V, f=1MHz External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 Unit µA µA 19.9±0.3 V 4.0 a b ø3.2±0.1 V 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL (Ω) 35.7 IC (A) 7 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 1.05 IB2 (A) –3.5 ton (µs) 1max tstg (µs) 5max tf (µs) 0.7max 5.45±0.1 B C E 5.45±0.1 Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 14 V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 2 I C /I B =5 Const. I C – V BE Temperature Characteristics (Typical) 14 (V CE =4V) 6 1. 12 A 1.2 A 12 Collector Current I C (A) 800mA Collector Current I C (A) 10 10 600mA 8 400m A 8 emp ) mp) e Te (Cas 1 V B E (sat) Cas eT 6 200mA 6 4 4 ˚C ( 25˚C 125 I B =100mA 2 2 V C E (sat) 0 0.02 0.05 0.1 0.5 1 5 10 0 0 0.2 0.4 0.6 0 0 1 2 3 4 0.8 –55˚C (Case Temp ) 1.0 1.2 Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) (V C E =4V) 50 8 t on •t stg • t f – I C Characteristics (Typical) t o n• t s t g• t f ( µ s) 5 V C C 250V I C :I B1 :–I B2 =10:1.5:5 1 t on 0.5 tf t s tg θ j-a – t Characteristics 125˚C DC C urrent G ain h FE 25˚C –55˚C 10 Sw it ching Time 5 0.02 0.05 0.1 0.5 1 5 10 14 0.1 0.2 0.5 1 Collector Current I C (A) 5 10 14 Collector Current I C (A) Safe Operating Area (Single Pulse) 50 10 Reverse Bias Safe Operating Area 50 130 P c – T a Derating s Ma xim um Powe r Dissipat io n P C (W) 0µ 10 Collector Cur rent I C (A) Collector Curr ent I C (A) 10 5 100 W ith In fin ite he at si nk 1 0.5 Without Heatsink Natural Cooling 1 0.5 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% 50 0.1 10 50 100 500 1000 0.1 50 100 500 1000 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 117 .


JM320240C C4706 FS25R12YT3


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