2SC4706. C4706 Datasheet

C4706 2SC4706. Datasheet pdf. Equivalent

Part C4706
Description 2SC4706
Feature 2SC4706 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute .
Manufacture Sanken electric
Datasheet
Download C4706 Datasheet




C4706
2SC4706
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
Application : Switching Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
2SC4706
Unit
VCBO 900 V
VCEO 600 V
VEBO 7 V
IC
14(Pulse28)
A
IB 7 A
PC
130(Tc=25°C)
W
Tj 150 °C
Tstg
–55to+150
°C
sElectrical Characteristics
Symbol
Conditions
ICBO
VCB=800V
IEBO
VEB=7V
V(BR)CEO
IC=10mA
hFE VCE=4V, IC=7A
VCE(sat)
IC=7A, IB=1.4A
VBE(sat)
IC=7A, IB=1.4A
fT VCE=12V, IE=–1.5A
COB VCB=10V, f=1MHz
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V) () (A) (V) (V) (A)
250 35.7
7
10 –5 1.05
IB2
(A)
–3.5
ton
(µs)
1max
(Ta=25°C)
2SC4706 Unit
100max
µA
100max
µA
600min
V
10 to 25
0.5max
V
1.2max
V
6typ MHz
160typ
pF
tstg
(µs)
5max
tf
(µs)
0.7max
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
4.8±0.2
2.0±0.1
a ø3.2±0.1
b
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
5.45±0.1
5.45±0.1
1.4
BCE
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
14
1.6A
12
10
8
6
1.2A
800mA
600mA
400mA
200mA
4
IB=100mA
2
0
0 1 2 34
Collector-Emitter Voltage VCE(V)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
2
IC/IB=5 Const.
1
VBE(sat)
VCE(sat)
0
0.02 0.05 0.1
0.5 1
Collector Current IC(A)
5 10
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
14
12
10
8
6
4
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-Emittor Voltage VBE(V)
hFE–IC Temperature Characteristics (Typical)
(VCE=4V)
50
125˚C
25˚C
–55˚C
10
t on• t stg• t f– I C Characteristics (Typical)
8
5
VCC 250V
IC:IB1:–IB2=10:1.5:5
1
ton
0.5
tf
tstg
5
0.02
0.05 0.1
0.5 1
Collector Current IC(A)
5 10 14
0.1
0.2
0.5 1
5
Collector Current IC(A)
10 14
θ j-a– t Characteristics
Safe Operating Area (Single Pulse)
50
100µs
10
1
0.5 Without Heatsink
Natural Cooling
0.1
10
50 100
500 1000
Collector-Emitter Voltage VCE(V)
Reverse Bias Safe Operating Area
50
Pc–Ta Derating
130
10 100
5
Without Heatsink
1 Natural Cooling
L=3mH
IB2=–1.0A
0.5 Duty:less than 1%
0.1
50
100 500
Collector-Emitter Voltage VCE(V)
1000
50
Without Heatsink
3.5
0
0 25 50
75
100 125
Ambient Temperature Ta(˚C)
150
117







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