POWER MOSFET. FS25SM-10A Datasheet

FS25SM-10A MOSFET. Datasheet pdf. Equivalent

Part FS25SM-10A
Description Nch POWER MOSFET
Feature MITSUBISHI Nch POWER MOSFET FS25SM-10A HIGH-SPEED SWITCHING USE FS25SM-10A OUTLINE DRAWING 15.9MA.
Manufacture Mitsubishi Electric Semiconductor
Datasheet
Download FS25SM-10A Datasheet




FS25SM-10A
FS25SM-10A
MITSUBISHI Nch POWER MOSFET
FS25SM-10A
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
15.9MAX.
f 3.2
Dimensions in mm
4.5
1.5
2
1.0
➀ ➁➂
5.45 5.45
4.4
0.6 2.8
G 10V DRIVE
G VDSS ................................................................................ 500V
G rDS (ON) (MAX) .............................................................. 0.20
G ID ......................................................................................... 25A
4
➁➃
GATE
DRAIN
SOURCE
DRAIN
TO-3P
APPLICATION
SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
PD
Tch
Tstg
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 200µH
Typical value
Conditions
Ratings
500
±30
25
75
25
200
–55 ~ +150
–55 ~ +150
4.8
Unit
V
V
A
A
A
W
°C
°C
g
Sep. 2001



FS25SM-10A
MITSUBISHI Nch POWER MOSFET
FS25SM-10A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 500V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 12A, VGS = 10V
ID = 12A, VGS = 10V
ID = 12A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 12A, VGS = 10V, RGEN = RGS = 50
IS = 12A, VGS = 0V
Channel to case
Min.
500
±30
2.5
15.0
Limits
Typ.
3.0
0.15
1.80
25.0
4600
460
100
60
100
630
140
1.5
Max.
±10
1
3.5
0.20
2.40
2.0
0.625
Unit
V
V
µA
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
250
200
150
100
50
0
0 50 100 150 200
CASE TEMPERATURE TC (°C)
MAXIMUM SAFE OPERATING AREA
7
5
3
2
tw =
102 10µs
7
5 100µs
3
2
101
7
5
3 TC = 25°C
2 Single Pulse
1ms
10
ms
100 DC
7
5
3
2
2 3 5 7101 2 3 5 7102 2 3 5 7
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
50
PD =
200W
40
VGS = 20V,10V,6V
TC = 25°C
Pulse Test
30
5V
20
10
0
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
VGS = 20V,10V,8V,5V
16
12
8
TC = 25°C
Pulse Test
4
4V
0
0 2 4 6 8 10
DRAIN-SOURCE VOLTAGE VDS (V)
Sep. 2001







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)