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FS25SM-10A

Mitsubishi Electric Semiconductor

Nch POWER MOSFET

MITSUBISHI Nch POWER MOSFET FS25SM-10A HIGH-SPEED SWITCHING USE FS25SM-10A OUTLINE DRAWING 15.9MAX. Dimensions in mm...


Mitsubishi Electric Semiconductor

FS25SM-10A

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Description
MITSUBISHI Nch POWER MOSFET FS25SM-10A HIGH-SPEED SWITCHING USE FS25SM-10A OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 ➃ 5.0 f 3.2 2 2 4 20.0 1.0 ➀ 5.45 ➁ ➂ 5.45 19.5MIN. 4.4 0.6 2.8 4 ➁➃ G 10V DRIVE G VDSS ................................................................................ 500V G rDS (ON) (MAX) .............................................................. 0.20Ω G ID ......................................................................................... 25A ➀ ➂ ➀ GATE ➁ DRAIN ➂ SOURCE ➃ DRAIN TO-3P APPLICATION SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current VGS = 0V VDS = 0V Conditions Ratings 500 ±30 25 75 25 200 –55 ~ +150 –55 ~ +150 4.8 Unit V V A A A W °C °C g Sep. 2001 Drain current (Pulsed) Avalanche drain current (Pulsed) L = 200µH Maximum power dissipation Channel temperature Storage temperature Weight Typical value MITSUBISHI Nch POWER MOSFET FS25SM-10A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25° C) Test conditions ID = 1mA, VGS = 0V IG = ± 100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V ID = 12A, VGS = 10V ID = 12A, VGS = 10V ID = 12A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Lim...




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