RQA0003DNS

www.DataSheet4U.com RQA0003DNS Silicon N-Channel MOS FET REJ03G0584-0300 Rev.3.00 Oct 12, 2006 Features High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 19 dB, PAE = 65% (f = 520 MHz) Small Outline Package (WSON0303-2: 3.0 × 3.0 × 0.8mm) Outline RENESAS Package code: PWSN0002ZA-A (Package name: HWSON-2 ) 3 2 3 1 1 3 2 1. Gate 2. Source 3. Drain 1 2 Note: Marking is “A0003”. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: Value at Tc = 25°C Symbol VDSS VGSS ID Pchnote Tch Tstg Ratings 16 ±5 2.4 7 150 –55 to +150 Unit V V A W °C °C This Device is sensitive to Electro Static Discharge. An Adequate careful handling procedure is requested. Rev.3.00 Oct 12, 2006 page 1 of 12 RQA0003DNS www.DataSheet4U.com Electrical Characteristics (Ta = 25°C) Item Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward Transfer Admittance Input capacitance Output capacitance Reverse transfer capacitance Output Power Power Added Efficiency Symbol IDSS IGSS VGS(off) |yfs| Ciss Coss Crss Pout PAE Min. — — 0.15 1.7 — — — 35 3.16 50 Typ — — 0.4 2.4 44 25 6.0 36 3.98 65 Max. 10 ±2 0.8 3.1 — — — — — — Unit µA µA V S pF pF pF dBm W % Test Conditions VDS = 16 V, VGS = 0 VGS = ±5 V, VDS = 0 VDS = 6 V, ID = 1 mA VDS = 6 V, ID = 1.2 A VGS = 5 V, VDS = 0, f = 1 MHz VDS = 6 V, VGS = 0, f = 1 MHz V...