RQA0004PXDQS

www.DataSheet4U.com RQA0004PXDQS Silicon N-Channel MOS FET REJ03G1489-0100 Rev.1.00 Dec 12, 2006 Features High Output Power, High Efficiency Pout = +29 dBm, PAE = 68% (f = 520 MHz) Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A (Package Name : UPAK R ) 3 3 2 1 1 4 1. Gate 2. Source 3. Drain 4. Source 2, 4 Note: Marking is “PX”. *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: Value at Tc = 25°C Symbol VDSS VGSS ID Pchnote Tch Tstg Ratings 16 ±5 0.3 3 150 –55 to +150 Unit V V A W °C °C This Device is sensitive to Electro Static Discharge. An Adequate careful handling procedure is requested. Rev.1.00 Dec 12, 2006 page 1 of 12 RQA0004PXDQS www.DataSheet4U.com Electrical Characteristics (Ta = 25°C) Item Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward Transfer Admittance Input capacitance Output capacitance Reverse transfer capacitance Output Power Power Added Efficiency Symbol IDSS IGSS VGS(off) |yfs| Ciss Coss Crss Pout PAE Min. — — 0.3 0.3 — — — 28.7 0.74 60 Typ — — 0.6 0.43 10 5 0.4 29.7 0.93 68 Max. 2 ±2 0.9 0.6 — — — — — — Unit µA µA V S pF pF pF dBm W % Test Conditions VDS = 16 V, VGS = 0 VGS = ±5 V, VDS = 0 VDS = 6 V, ID = 1 mA VDS = 6 V, ID = 0.3 A VGS = 5 V, VDS = 0, f = 1 MHz VDS = 6 V, VGS = 0, f...