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RQA0008NXAQS
Silicon N-Channel MOS FET
REJ03G1569-0100 Rev.1.00 Jul 04, 2007
Features
High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 18 dB, PAE = 65% (f = 520 MHz) Compact package capable of surface mounting
Outline
RENESAS Package code: PLZZ0004CA-A (Package Name : UPAK R )
3
3
2
1 1 4
1. Gate 2. S...
