ST2SC1213

www.DataSheet4U.com ST 2SC1213 / 2SC1213A NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three groups, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 2SA673 and ST 2SA673A are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Value ST 2SC1213 Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC Ptot Tj TS 35 35 4 500 400 150 -55 to +150 ST 2SC1213A 50 50 V V V mA mW O O Unit C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 7/12/2002 www.DataSheet4U.com ST 2SC1213 / 2SC1213A Characteristics at Tamb=25 OC Symbol DC Current Gain at IC=10mA, VCE=3V B C D at IC=500mA, VCE=3V Collector Cutoff Current at VCB=20V at VCB=20V at IC=10μA ST 2SC1213 ST2SC1213A ST 2SC1213 ST 2SC1213A Collector Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=10μA Collector Saturation Voltage at IC=150mA, IB=15mA Base Emitter Voltage at IC=10mA, VCE=3V ST 2SC1213 ST 2SC1213A VBE VBE 0.64 0.64 V V ST 2SC1213 ST 2SC1213A VCE(sat) VCE(sat) 0.2 0.2 0.6 0.6 V V ST 2SC1213 ST 2SC1213A V(BR)EBO V(BR)EBO 4 4 ...