Planar Transistor. ST2SC2001 Datasheet

ST2SC2001 Transistor. Datasheet pdf. Equivalent

Part ST2SC2001
Description NPN Silicon Epitaxial Planar Transistor
Feature www.DataSheet4U.com ST 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifi.
Manufacture SEMTECH ELECTRONICS
Datasheet
Download ST2SC2001 Datasheet




ST2SC2001
ST 2SC2001
www.DataSheet4U.com
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into three groups, O, Y
and G, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 oC)
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
TS
Value
30
25
5
700
600
150
-55 to +150
Unit
V
V
V
mA
mW
OC
OC
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002



ST2SC2001
ST 2SC2001
www.DataSheet4U.com
Characteristics at Tamb=25 oC
DC Current Gain
at VCE=1V, IC=100mA
Current Gain Group O
Y
G
at VCE=1V, IC=700mA
Collector Base Breakdown Voltage
at IC=10μA
Base Emitter Voltage
at IC=10mA, VCE=6V
Emitter Cutoff Current
at VEB=5V
Collector Cutoff Current
at VCB=30V
Collector Saturation Voltage
at IC=700mA, IB=70mA
Base Saturation Voltage
at IC=700mA, IB=70mA
Gain Bandwidth Product
at VCE=6V, IC=10mA
Output Capacitance
at VCB=6V, f=1MHz
Symbol
hFE
hFE
hFE
hFE
V(BR)CBO
VBE
IEBO
ICBO
VCE(sat)
VBE(sat)
fT
COB
Min.
90
135
200
50
30
0.6
-
-
-
-
50
-
Typ.
-
-
-
-
-
-
-
-
0.2
0.95
170
13
Max.
Unit
180 -
270 -
400 -
--
-V
0.7 V
0.1 μA
0.1 μA
0.6 V
1.2 V
- MHz
25 pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002







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