Planar Transistor. ST2SC2002 Datasheet

ST2SC2002 Transistor. Datasheet pdf. Equivalent

Part ST2SC2002
Description NPN Silicon Epitaxial Planar Transistor
Feature www.DataSheet4U.com ST 2SC2002 NPN Silicon Epitaxial Planar Transistor for use in driver stage of h.
Manufacture SEMTECH ELECTRONICS
Datasheet
Download ST2SC2002 Datasheet




ST2SC2002
ST 2SC2002
www.DataSheet4U.com
NPN Silicon Epitaxial Planar Transistor
for use in driver stage of high voltage audio
equipments.
The transistor is subdivided into three groups, M, L
and K, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 oC)
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
IB
Ptot
Tj
TS
Value
60
60
5
300
60
600
150
-55 to +150
Unit
V
V
V
mA
mA
mW
OC
OC
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 08/07/2005



ST2SC2002
ST 2SC2002
www.DataSheet4U.com
Characteristics at Tamb=25 oC
DC Current Gain
at VCE=1V, IC=50mA
Current Gain Group M
L
K
at VCE=2V, IC=300mA
Base Emitter Voltage
at IC=10mA, VCE=6V
Emitter Cutoff Current
at VEB=5V
Collector Cutoff Current
at VCB=60V
Collector Saturation Voltage
at IC=300mA, IB=30mA
Base Saturation Voltage
at IC=300mA, IB=30mA
Gain Bandwidth Product
at VCE=6V, IE=-10mA
Collector to Base Capacitance
at VCB=6V, f=1MHz
Symbol
hFE
hFE
hFE
hFE
VBE
IEBO
ICBO
VCE(sat)
VBE(sat)
fT
COB
Min.
90
135
200
30
600
-
-
-
-
50
-
Typ.
-
-
-
80
645
-
-
0.15
0.86
140
7.0
Max.
Unit
180 -
270 -
400 -
--
700 mV
100 nA
100 nA
0.6 V
1.2 V
- MHz
15 pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 08/07/2005







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