Planar Transistor. ST2SC2655 Datasheet

ST2SC2655 Transistor. Datasheet pdf. Equivalent

Part ST2SC2655
Description NPN Silicon Epitaxial Planar Transistor
Feature www.DataSheet4U.com ST 2SC2655 (TO-92) NPN Silicon Epitaxial Planar Transistor for switching and A.
Manufacture SEMTECH ELECTRONICS
Datasheet
Download ST2SC2655 Datasheet



ST2SC2655
ST 2SC2655 (TO-92)
www.DataSheet4U.com
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into two groups O and Y,
according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta=25oC)
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Ts
Value
50
50
5
2
900
150
-55 to +150
Unit
V
V
V
A
mW
OC
OC
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002



ST2SC2655
ST 2SC2655 (TO-92)
www.DataSheet4U.com
Characteristics at Tamb=25
DC Current Gain
at VCE=2V, IC=0.5A
at VCE=2V, IC=1.5A
Collector Base Breakdown Voltage
at IC=1mA
Collector Emitter Breakdown Voltage
at IC=10mA
Emitter Base Breakdown Voltage
at IE=1mA
Collector Cutoff Current
at VCB=50V
Emitter Cutoff Current
at VEB=5V
Collector Saturation Voltage
at IC=1A, IB=50mA
Base Saturation Voltage
at IC=1A, IB=50mA
Gain Bandwidth Product
at VCE=2V, IC=0.5A
Output Capacitance
at VCB=10V, f=1MHz
Symbol
O hFE
Y hFE
hFE
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
VBE(sat)
fT
COB
Min.
70
120
40
50
50
5
-
-
-
-
-
-
Typ. Max. Unit
- 140 -
- 240 -
---
- -V
- -V
- -V
- 1 μA
- 1 μA
- 0.5 V
- 1.2 V
100 - MHz
40 - pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002







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