Planar Transistor. ST2SC2668 Datasheet

ST2SC2668 Transistor. Datasheet pdf. Equivalent

Part ST2SC2668
Description NPN Silicon Epitaxial Planar Transistor
Feature www.DataSheet4U.com ST 2SC2668 NPN Silicon Epitaxial Planar Transistor High frequency amplifier app.
Manufacture SEMTECH ELECTRONICS
Datasheet
Download ST2SC2668 Datasheet




ST2SC2668
ST 2SC2668
www.DataSheet4U.com
NPN Silicon Epitaxial Planar Transistor
High frequency amplifier applications.
The transistor is subdivided into three groups, R, O
and Y, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta=25oC)
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
IB
Ptot
Tj
TS
Value
40
30
4
20
4
100
125
-55 to +125
Unit
V
V
V
mA
mA
mW
OC
OC
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002



ST2SC2668
ST 2SC2668
www.DataSheet4U.com
Characteristics at Tamb=25 OC
DC Current Gain
at VCE=6V, IC=1mA
Current Gain Group R
O
Y
Collector Cutoff Current
at VCB=40V
Emitter Cutoff Current
at VEB=4V
Reverse Transfer Capacitance
at VCE=6V, f=1MHz
Transition Frequency
at VCE=6V, IC=1mA
Collector Base Time Constant
at VCE=6V, IE=-1mA,f=30MHz
Noise Figure
at VCC=6V, f=100MHz, IE=-1mA
Power Gain
at VCC=6V, f=100MHz, IE=-1mA
Symbol
hFE
hFE
hFE
ICBO
IEBO
Cre
fT
CC.rbb’
NF
Gpe
Min.
40
70
100
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
0.70
550
-
2.5
18
Max.
80
140
200
0.5
0.5
-
-
30
5.0
-
Unit
-
-
-
μA
μA
pF
MHz
ps
dB
dB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002







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