Planar Transistor. ST2SC2715 Datasheet

ST2SC2715 Transistor. Datasheet pdf. Equivalent

Part ST2SC2715
Description NPN Silicon Epitaxial Planar Transistor
Feature www.DataSheet4U.com ST 2SC2715 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier.
Manufacture SEMTECH ELECTRONICS
Datasheet
Download ST2SC2715 Datasheet




ST2SC2715
ST 2SC2715
www.DataSheet4U.com
NPN Silicon Epitaxial Planar Transistor
for high frequency amplifier applications
for FM IF, OSC stage and AM CONV. IF stage
The transistor is subdivided into three groups, R,
O and Y, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
IB
Ptot
Tj
TS
TO-92 Plastic Package
Weight approx. 0.19g
Value
35
30
4
50
10
300
125
-55 to +125
Unit
V
V
V
mA
mA
mW
OC
OC
Characteristics at Tamb = 25 OC
Parameter
DC Current Gain
at VCE = 12 V, IC = 2 mA
Current Gain Group
Collector Cutoff Current
at VCB = 35 V
Emitter Cutoff Current
at VEB = 4 V
Collector Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
Base Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
Current Gain Bandwidth Product
at VCE = 10 V, IC = 1 mA
Output Capacitance
at VCB = 10 V, f = 1 MHz
Power Gain
at VCE = 6 V, -IE = 1 mA, f = 10.7 MHz
R
O
Y
Symbol
hFE
hFE
hFE
ICBO
IEBO
VCE(sat)
VBE(sat)
fT
Cob
Gpe
Min.
40
70
120
-
-
-
-
100
-
27
Typ. Max. Unit
- 80 -
- 140 -
- 240 -
- 0.1 µA
- 0.1 µA
- 0.4 V
- 1V
- 400 MHz
2 3.2 pF
30 33 dB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 06/05/2006



ST2SC2715
ST 2SC2715
www.DataSheet4U.com
10 I B=90 A
8 I B=80 A
I B=70 A
6 I B=60 A
I B=50 A
4 I B=40 A
I B=30 A
2 I B=20 A
I B=10 A
0
0 2 4 6 8 10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
10
Ic=10I B
1 VBE(sat)
0.1 VCE(sat)
0.01
0.1
1
10
Ic[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Satruation Voltage
10
f=1MHz
I E=0
1
0.1
1
10
100
VCB[V], COLLECTOR BASE VOLTAGE
Figure 5. Collector Output Capacitance
1000
100
VCE=12V
10
0.1
1 10
I C[mA], COLLECTOR CURRENT
100
Figure 2. DC Current Gain
32
28
24
20
16
12
8
4
0
0
VCE=12V
0.2 0.4 0.6 0.8 1.0 1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
1000
100
VCE=10V
10
1
10
I C[mA], COLLECTOR CURRENT
Figure 6. Current Gain Bandwidth Product
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
R
Dated : 06/05/2006







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