ST2SC2884U

www.DataSheet4U.com ST 2SC2884U NPN Silicon Epitaxial Planar Transistor for audio frequency amplifier applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC TJ TS Value 35 30 5 800 500 150 - 55 to + 150 Unit V V V mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 100 mA at VCE = 1 V, IC = 700 mA Collector Base Cutoff Current at VCB = 35 V Emitter Base Cutoff Current at VEB = 5 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 20 mA Base Emitter On Voltage at VCE = 1 V, IC = 10 mA Transition Frequency at VCE = 5 V, IC = 10 mA Output Capacitance at VCB = 10 V, f = 1 MHz Current Gain Group O Y Symbol hFE hFE hFE ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(on) fT Cob Min. 100 160 35 35 30 5 0.5 Typ. 120 13 Max. 200 320 0.1 0.1 0.5 0.8 Unit µA µA V V V V V MHz pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 03/01/2008 www.DataSheet4U.com ST 2SC2884U SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stoc...