ST2SC3190

www.DataSheet4U.com ST 2SC3190 NPN Silicon Epitaxial Planar Transistor High frequency low noise amplifier application HF band amplifier application The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25oC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IE Ptot Tj TS Value 35 30 4 100 -100 400 125 -55 to +125 Unit V V V mA mA mW O O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 www.DataSheet4U.com ST 2SC3190 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=12V, IC=2mA Current Gain Group R O Y Collector Cutoff Current at VCB=20V Emitter Cutoff Current at VEB=2V Collector Saturation Voltage at IC=10mA, IB=1mA Base Emitter Saturation Voltage at IC=10mA, IB=1mA Transition Frequency at VCE=10V, IC=2mA Reverse Transfer Capacitance at VCE=10V, f=1MHz Collector Base Time Constant at VCE=10V, IE=-1mA, f=30MHz Noise Figure at VCE=10V, f=1MHz, IE=-1mA, Rg=50ς NF 2 3.5 dB Cc,rbb 30 50 ps Cre 2.2 3 pF fT 80 120 MHz VBE(sat) 1 V VCE(sat) 0.4 V IEBO 1 μA ICBO 0.1 μA hFE hFE hFE 40 70 120 80 140 240 Mi...