2SK2961
www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV)
2
2SK2961
Relay Dr...
2SK2961
www.DataSheet4U.com
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (L −π−MOSV)
2
2SK2961
Relay Drive, Motor Drive and DC−DC Converter Application
Unit: mm
z Low drain−source ON resistance z High forward transfer admittance
: RDS (ON) = 0.2 Ω (typ.) : |Yfs| = 2.0 S (typ.)
z Low leakage current : IDSS = 100 μA (VDS = 60 V) z Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD Tch Tstg Rating 60 60 ±20 2.0 6.0 0.9 150 −55~150 Unit V V V A W °C °C
Pulse (Note 1)
JEDEC JEITA TOSHIBA
TO-92MOD — 2-5J1C
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to ambient Symbol...