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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUH315D
DESCR...
www.DataSheet4U.com
INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Power
Transistor
BUH315D
DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Integrated Diode
APPLICATIONS ·Designed for use in horizontal deflection circuits in TV’s and monitors.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB
B
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature
VALUE 1500 700 10 6 12 3 5 44 150 -65~150
UNIT V V V A A A A W ℃ ℃
IBM PC TJ Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.8 UNIT ℃/W
isc Website:www.iscsemi.cn
www.DataSheet4U.com
INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
BUH315D
TYP
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA ;IB= 0,L= 25mH
700
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 3A; IB= 1A
B
1.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 3A; IB= 1A
B
1.5
V
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
300
mA
ICES
Collector Cutoff Current
VCE= 1500V;VBE= 0 IC= 3A ; VCE= 5V IC= 3A ; VCE= 5V;TC=100℃ IF= 3A 4 2.5
0.2 9
mA
hFE
DC Current Gain
VECF
C-E Diode Forward Voltage
2.5
V
Switching T...