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Part Number IXTQ42N25P
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Power MOSFET
Datasheet IXTQ42N25P DatasheetIXTQ42N25P Datasheet (PDF)

  IXTQ42N25P   IXTQ42N25P
PolarHTTM Power MOSFET IXTA 42N25P IXTP 42N25P IXTQ 42N25P VDSS = ID25 = ≤ RDS(on) 250 42 84 V A mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol VDSS V DGR VGS VGSM ID25 IDM I AR EAR E AS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C T J = 25° C to 150° C; R GS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM T C = 25° C TC = 25° C T C = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 10 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P / TO-220) TO-3P TO-220 TO-263 Maximum Ratings 250 V 250 V ±20 V ±30 V 42 A 110 A 42 A 30 mJ 1.0 J 10 V/ns 300 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 5.5 g 4 g 3 g Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 250 V VGS(th) VD.



T1616 IXTQ42N25P IXTA42N25P


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