N-channel MOSFETs. IXTQ44N50P Datasheet

IXTQ44N50P MOSFETs. Datasheet pdf. Equivalent

Part IXTQ44N50P
Description Polar N-channel MOSFETs
Feature Advance Technical Information www.DataSheet4U.com PolarHVTM Power MOSFET N-Channel Enhancement Mode.
Manufacture IXYS Corporation
Datasheet
Download IXTQ44N50P Datasheet




IXTQ44N50P
www.DataSheet4U.com
PolarHVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Advance Technical Information
IXTQ 44N50P
VDSS =
ID25 =
<RDS(on)
500 V
44 A
140 m
Symbol
VDSS
VDGR
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 10
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
for 10s
Mounting torque(TO-247)
TO-3P
Maximum Ratings
500 V
500 V
TO-3P (IXTQ)
±30 V
44 A
132 A
G
44 A
DS
55 mJ
1.7 J
10
V/ns
G = Gate
S = Source
D = Drain
TAB = Drain
(TAB)
650
-55 ... +150
150
-55 ... +150
300
260
W Features
°C
°C z International standard packages
°C z Unclamped Inductive Switching (UIS)
°C
°C
rated
z Low package inductance
- easy to drive and to protect
1.13/10 Nm/lb.in.
6g
Advantages
z Easy to mount
z Space savings
z High power density
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250µA
Characteristic Values
Min. Typ.
Max.
500 V
VGS(th)
VDS = VGS, ID = 250µA
3.0 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±10 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
140 m
© 2005 IXYS All rights reserved
DS99364(03/05)



IXTQ44N50P
www.DataSheet4U.com
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless
Min.
otherwise specified)
Typ. Max.
VDS= 20 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
20 32
5440
639
40
S
pF
pF
pF
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 3 (External)
25 ns
27 ns
75 ns
21 ns
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
98 nC
35 nC
30 nC
(TO-3P)
0.21
0.19 K/W
K/W
IXTQ 44N50P
TO-3P (IXTQ) Outline
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless
Min.
otherwise specified)
typ. Max.
IS VGS = 0 V
ISM Repetitive
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
44 A
132 A
1.5 V
trr IF = 22 A
-di/dt = 100 A/µs
400 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents:
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)