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Part Number IXTQ44N50P
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Polar N-channel MOSFET
Datasheet IXTQ44N50P DatasheetIXTQ44N50P Datasheet (PDF)

  IXTQ44N50P   IXTQ44N50P
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXTQ44N50P VDSS = ID25 = RDS(on)  500V 44A 140m TO-3P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque Maximum Ratings 500 V 500 V  30 V  40 V 44 A 110 A 44 A 1.7 J 10 V/ns 658 W -55 ... +150 150 -55 ... +150  C  C  C 300 °C 260 °C 1.13/10 5.5 Nm/lb.in g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 500 V 3.0 5.0 V    .



IXTP42N25P IXTQ44N50P NSVS802


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