HMC753LP4E

www.DataSheet4U.com v01.0609 HMC753LP4E GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 11 GHz Features Noise Figure: 1.5 dB @ 4 GHz Gain: 17 dB P1dB Output Power: +18 dBm Supply Voltage: +5V @ 55 mA Output IP3: +30 dBm 50 Ohm matched Input/Output 24 Lead Plastic 4x4mm SMT Package: 16mm2 8 LOW NOISE AMPLIFIERS - SMT Typical Applications This HMC753LP4E is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation Functional Diagram General Description The HMC753LP4E is a GaAs MMIC Low Noise Wideband Amplifier housed in a leadless 4x4 mm plastic surface mount package. The amplifier operates between 1 and 11 GHz, providing up to 16.5 dB of small signal gain, 1.5 dB noise figure, and output IP3 of +30 dBm, while requiring only 55 mA from a +5V supply. The P1dB output power of up to +18 dBm enables the LNA to function as a LO driver for balanced, I/Q or image reject mixers. The HMC753LP4E also features I/Os that are DC blocked and internally matched to 50 Ohms, making it ideal for high capacity microwave radios or VSAT applications. This versatile LNA is also available in die form as the HMC-ALH444. Electrical Specifi cations, TA = +25° C, Vdd= +5V, Idd = 55 mA[2] Parameter Frequency Range Gain Gain Variation over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) (Vdd = 5V, set Vgg2 = 1.5V, Vgg1 = -0.8V T...