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AO8403 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO8403 is Pb-free (meets ROHS & Sony 259 specifications). AO8403L is a Green Product ordering option. AO8403 and AO8403L are electrically identical.
Features
VDS (V) = -20V ID = -4 A (VGS = -4.5V) RDS(ON) < 42mΩ (VGS = -4.5V) RDS(ON) < 52mΩ (VGS = -2.5V) RDS(ON) < 70mΩ (VGS = -1.8V) ESD Rating: 3000V HBM
TSSOP-8 Top View D S S G 1 2 3 4 8 7 6 5 D S S D G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum -20 ±8 -4 -3.5 -30 1.5 1 -55 to 150
Units V V A
TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 64 89 53
Max 83 120 70
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO8403
www.DataSheet4U.com
Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250µA, VGS=0V VDS=-16V, VGS=0V TJ=55°C VDS=0V, VGS=±4.5V VDS=0V, VGS=±8V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-4A Static Drain-Source On-Resistance TJ=125°C VGS=-2.5V, ID=-4A VGS=-1.8V, ID=-3A VDS=-5V, ID=-4A -0.3 -25 -0.55 35 48 45 8 56 16 -0.78 Min -20 -1 -5 ±1 ±10 -1 A 42 60 52 70 -1 -2.2 1750 mΩ mΩ mΩ S V A pF pF pF Ω 21 nC nC nC ns ns ns ns ns nC Typ Max Units V µA µA µA
gFS VSD IS
Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz
1450 205 160 6.5 17.2 1.3 4.5 9.5 17 94 35 31 13.8
VGS=-4.5V, VDS=-10V, ID=-4A
VGS=-4.5V, VDS=-10V, RL=2.5Ω, RGEN=3Ω
IF=-4A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev1: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO8403
www.DataSheet4U.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25 20 15 10 VGS=-1.5V 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 80 Normalized On-Resistance VGS=-1.8V RDS(ON) (mΩ ) 60 VGS=-2.5V 40 VGS=-4.5V 20 0 2 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 90 80 RDS(ON) (mΩ ) 70 60 50 40 30 20 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 25°C 125°C ID=-4A -IS (A) 1E+01 1E+00 1E-01 1E-02 1E-03 1E-04 1E-05 25°C 125°C 1.6 ID=-4A, VGS=-2.5V 1.4 ID=-2A, VGS=-1.8V 2 0 0 0.5 1 1.5 2 -VGS(Volts) Figure 2: Transfer Characteristics 25°C -8V -4.5V -3.0V -2.0V -ID (A) -ID(A) -2.5V 6 4 125°C 10 VDS=-5V 8
1.2
ID=-4A, VGS=-4.5V
1.0
0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
Alpha & Omega Semiconductor, Ltd.
AO8403
www.DataSheet4U.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 -VGS (Volts) 3 2 1 0 0 5 10 15 20 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-10V ID=-4A Capacitan.