AO8403 Datasheet PDF Download, Alpha & Omega Semiconductors





(PDF) AO8403 Datasheet Download

Part Number AO8403
Description P-Channel Enhancement Mode Field Effect Transistor
Manufacture Alpha & Omega Semiconductors
Total Page 4 Pages
PDF Download Download AO8403 Datasheet PDF

Features: www.DataSheet4U.com AO8403 P-Channel En hancement Mode Field Effect Transistor General Description The AO8403 uses adv anced trench technology to provide exce llent RDS(ON), low gate charge and oper ation with gate voltages as low as 1.8V . This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO84 03 is Pb-free (meets ROHS & Sony 259 sp ecifications). AO8403L is a Green Produ ct ordering option. AO8403 and AO8403L are electrically identical. Features V DS (V) = -20V ID = -4 A (VGS = -4.5V) R DS(ON) < 42mΩ (VGS = -4.5V) RDS(ON) < 52mΩ (VGS = -2.5V) RDS(ON) < 70mΩ (VGS = -1.8V) ESD Rating: 3000V HBM TS SOP-8 Top View D S S G 1 2 3 4 8 7 6 5 D S S D G D S Absolute Maximum Ratin gs TA=25°C unless otherwise noted Para meter Symbol VDS Drain-Source Voltage V GS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power D issipation A B Maximum -20 ±8 -4 -3.5 -30 1.5 1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID .

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AO8403
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8403 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as
a load switch or in PWM applications. It is ESD
protected. Standard Product AO8403 is Pb-free (meets
ROHS & Sony 259 specifications). AO8403L is a Green
Product ordering option. AO8403 and AO8403L are
electrically identical.
Features
VDS (V) = -20V
ID = -4 A (VGS = -4.5V)
RDS(ON) < 42m(VGS = -4.5V)
RDS(ON) < 52m(VGS = -2.5V)
RDS(ON) < 70m(VGS = -1.8V)
ESD Rating: 3000V HBM
TSSOP-8
Top View
D1
S2
S3
G4
8D
7S
6S
5D
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-20
±8
-4
-3.5
-30
1.5
1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
64
89
53
Max
83
120
70
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.

           






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